NRND

2SD1047

High power NPN epitaxial planar bipolar transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-3P

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Key features
  • High breakdown voltage VCEO = 140 V
  • Typical ft = 20 MHz
  • Fully characterized at 125 oC
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ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-3P

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Key features
  • High breakdown voltage VCEO = 140 V
  • Typical ft = 20 MHz
  • Fully characterized at 125 oC