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NRND
2SD1047
High power NPN epitaxial planar bipolar transistor
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-3P |
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
|
In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $4.44 | 0% |
| 10-24 | $4.22 | 5% |
| 25-30 | $3.53 | 21% |
| 30 + | Contact sales | |
$4.44
$4.44
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-3P |
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
|