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2STR1160

Low voltage fast-switching NPN power transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSOT-23

The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.


The complementary PNP is the 2STR2160.

Key features
  • Very low collector-emitter saturation voltage
  • High current gain characteristic
  • Fast switching speed
  • Miniature SOT-23 plastic package for surface mounting circuits
In stock
Quantity $ per unit Savings
1-9$0.341%
10-99$0.2818%
100-500$0.1944%
Contact sales
$0.34
$0.34
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSOT-23

The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.


The complementary PNP is the 2STR2160.

Key features
  • Very low collector-emitter saturation voltage
  • High current gain characteristic
  • Fast switching speed
  • Miniature SOT-23 plastic package for surface mounting circuits