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N-channel 600 V, 0.78 Ohm typ., 6 A MDmesh DM2 Power MOSFET in a DPAK package
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N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
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Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
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Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package
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Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package