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N-channel 800 V, 290 mOhm typ., 14 A MDmesh K5 Power MOSFET in a TO-220FP package
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N-channel 600 V, 260 mOhm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP package
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Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
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Galvanically isolated gate driver for IGBTs with 6 A Source/Sink current, desaturation protection an
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Galvanically isolated gate driver for SiC MOSFETs with 6 A Source/Sink current, desaturation protect
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Galvanically isolated gate driver for IGBTs with 10 A Source/Sink current, desaturation protection a