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600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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Dynamic NFC/RFID tag IC with 4-Kbit EEPROM, and fast transfer mode capability
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Dynamic NFC/RFID tag IC with 4-Kbit EEPROM, and fast transfer mode capability