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600 V, 12 A Turbo 2 Ultrafast Diode
Adjustable micropower shunt voltage reference
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
Galvanically isolated 4 A single gate driver for SiC MOSFETs
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
100 V, 30 A 3-lead single Low Leakage Power Schottky rectifier
High voltage converter
Multi-mode controller for SMPS
High Voltage Power Schottky Rectifier
Dual, high speed comparator