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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
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600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
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Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package