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    main product photo

    Active

    BDX53C

    NPN power Darlington transistor

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220
    Description

    The devices are manufactured in planar base island technology with monolithic Darlington configuration.

    Key features
    Key features
    • Good hFE linearity
    • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
    • High fT frequency
    Out of Stock
    Quantity $ per unit Savings
    1-9$1.270%
    10-99$1.1510%
    100$0.8930%
    100 + Contact sales
    $1.27
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220
    Description

    The devices are manufactured in planar base island technology with monolithic Darlington configuration.

    Key features
    Key features
    • Good hFE linearity
    • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
    • High fT frequency