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BUL128D-B

Active

High voltage fast-switching NPN power transistor

Quantity $ per Unit Savings
1 - 9$0.701%
10 - 99$0.6112%
100 - 499$0.4733%
500$0.3747%
Contact Sales
In stock
$0.70
Parameter NameParameter Value
Operating RangeIndustrial
Operating Temp Min Celsius-65.0
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.


The device is designed for use in lighting applications and low cost switch-mode power supplies.

Key features
  • INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
  • VERY HIGH SWITCHING SPEED
  • STMicroelectronics PREFERRED SALES TYPE
  • HIGH VOLTAGE CAPABILITY
  • NPN TRANSISTOR
  • MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
  • LOW SPREAD OF DYNAMIC PARAMETERS