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    ESDA8V2-1J

    EOS and ESD Transil™ protection for charger and battery port

    Parameters
    Operating Rangedomestic
    ECCN USEAR99
    ECCN EUNEC
    Package Size1.66 x 1.28 x 1.1
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSOD323
    Description

    The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages.

    Key features
    Key features
    • Complies with the following standards: IEC 61000-4-2 level 4 ±15 kV (air discharge) ±8 kV (contact discharge) MIL STD 883G - Method 3015-7: class 3B HBM (human body model): ≥8kV
    • Breakdown voltage VBR = 8.2 V
    • High peak power dissipation: 500 W (8/20 μs waveform)
    • Unidirectional device
    • Low leakage current (< 0.5 μA @ 5 V) Benefits High EOS and ESD protection level High integration Suitable for high density boards
    • ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge
    In stock
    Quantity $ per unit Savings
    1-9$0.232%
    10-99$0.1632%
    100-500$0.0770%
    500 + Contact sales
    $0.23
    $0.23
    Parameters
    Operating Rangedomestic
    ECCN USEAR99
    ECCN EUNEC
    Package Size1.66 x 1.28 x 1.1
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSOD323
    Description

    The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages.

    Key features
    Key features
    • Complies with the following standards: IEC 61000-4-2 level 4 ±15 kV (air discharge) ±8 kV (contact discharge) MIL STD 883G - Method 3015-7: class 3B HBM (human body model): ≥8kV
    • Breakdown voltage VBR = 8.2 V
    • High peak power dissipation: 500 W (8/20 μs waveform)
    • Unidirectional device
    • Low leakage current (< 0.5 μA @ 5 V) Benefits High EOS and ESD protection level High integration Suitable for high density boards
    • ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge