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    EVAL6491HB

    Demonstration board for L6491 gate driver with smart shut down feature

    Parameters
    Target ApplicationFactory Automation
    Core ProductL6491
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs, with a 4 A sink and source current capability.The high-side (floating) section is designed to stand a voltage rail up to 600 V....
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    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity: 50 V/ns in full temperature range
    • Driver current capability: 4 A source/sink
    • Comparator for fault protections
    • Smart shutdown function
    • Integrated bootstrap diode
    • Adjustable deadtime
    • Interlocking function
    • Switching times 15 ns rise/fall with 1 nF load
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Compact and simplified layout
    • Bill of material reduction
    • Effective fault protection
    • Flexible, easy and fast design
    In stock
    Quantity $ per unit Savings
    1-2$94.120%
    2 + Contact sales
    $94.12
    $94.12
    Parameters
    Target ApplicationFactory Automation
    Core ProductL6491
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs, with a 4 A sink and source current capability.The high-side (floating) section is designed to stand a voltage rail up to 600 V....
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity: 50 V/ns in full temperature range
    • Driver current capability: 4 A source/sink
    • Comparator for fault protections
    • Smart shutdown function
    • Integrated bootstrap diode
    • Adjustable deadtime
    • Interlocking function
    • Switching times 15 ns rise/fall with 1 nF load
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Compact and simplified layout
    • Bill of material reduction
    • Effective fault protection
    • Flexible, easy and fast design
    Associated products