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EVALPWD13F60

High-voltage evaluation board for the PWD13F60

Core ProductPWD13F60
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily...
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Key features
  • Power system-in-package integrating gate drivers and high-voltage power MOSFETs:
    • Low RDS(on) = 320 mΩ
    • BVDSS = 600 V
  • Suitable for operating as:
    • Full-bridge
    • Dual independent half-bridges
  • Wide input supply voltage down to 6.5 V
  • UVLO protection on supply voltage
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Interlocking function to prevent cross conduction
  • Internal bootstrap diodes
  • QFN (10x13 mm) package
  • Very compact layout
  • RoHS compliant
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$31.87
$31.87
Core ProductPWD13F60
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily...
Read More

Key features
  • Power system-in-package integrating gate drivers and high-voltage power MOSFETs:
    • Low RDS(on) = 320 mΩ
    • BVDSS = 600 V
  • Suitable for operating as:
    • Full-bridge
    • Dual independent half-bridges
  • Wide input supply voltage down to 6.5 V
  • UVLO protection on supply voltage
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Interlocking function to prevent cross conduction
  • Internal bootstrap diodes
  • QFN (10x13 mm) package
  • Very compact layout
  • RoHS compliant