Toggle Nav
Search
Compare ()
Cart 0
Menu
Account
Settings
  • Language
    English
    • Currency
    USD

    Spring deal: FREE shipping of STM32G4 motor control board with code DV-SERVO-FREESHIP-04 🛒 Claim now!

    🎉This month: $5.99 flat shipping rate, anything, anywhere! 🛒 Order now!

    main product photo

    Active

    EVALPWD13F60

    High-voltage evaluation board for the PWD13F60

    Parameters
    Core ProductPWD13F60
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily...
    Read More

    Key features
    Key features
    • Power system-in-package integrating gate drivers and high-voltage power MOSFETs:
      • Low RDS(on) = 320 mΩ
      • BVDSS = 600 V
    • Suitable for operating as:
      • Full-bridge
      • Dual independent half-bridges
    • Wide input supply voltage down to 6.5 V
    • UVLO protection on supply voltage
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Interlocking function to prevent cross conduction
    • Internal bootstrap diodes
    • QFN (10x13 mm) package
    • Very compact layout
    • RoHS compliant
    In stock
    Quantity $ per unit Savings
    1$28.390%
    1 + Contact sales
    $28.39
    $28.39
    Parameters
    Core ProductPWD13F60
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily...
    Read More

    Key features
    Key features
    • Power system-in-package integrating gate drivers and high-voltage power MOSFETs:
      • Low RDS(on) = 320 mΩ
      • BVDSS = 600 V
    • Suitable for operating as:
      • Full-bridge
      • Dual independent half-bridges
    • Wide input supply voltage down to 6.5 V
    • UVLO protection on supply voltage
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Interlocking function to prevent cross conduction
    • Internal bootstrap diodes
    • QFN (10x13 mm) package
    • Very compact layout
    • RoHS compliant
    Associated products