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    EVALSTDRV600HB8

    Demonstration board kit for L638xE and L639x high-voltage gate drivers

    Parameters
    Target ApplicationBrushed DC Motor
    Core ProductL6385E, L6387E, L6388E, L6389E, L6395, L6398, L6399
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The L638xE and L639x are high voltage devices manufactured with the BCD™ “offline” technology. They are single chip half-bridge gate drivers for N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL...
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    Key features
    Key features
    • Half-bridge configuration
    • High voltage rail up to 600 V
    • Includes samples of each compatible gate driver in SO8 package
      • L6385E, L6387E, L6388E, L6389E,
      • L6395, L6398, L6399
    • Compatible with MOSFETs/IGBTs in
      • DPAK, D2PAK, TO-220, TO-220FP
    • dV/dt transient immunity ± 50 V/ns in full temperature range
    • Integrated bootstrap diode
    • Dedicated high- and low-side driving inputs
    • Compact and simplified layout
    • Gate drivers in the kit features different functionalities and characteristics
      • UVLO on both - high-side and low-side
      • Internal deadtime, or no deadtime
      • Interlocking for anti cross-conduction protection
      • Ability to drive asymmetrical half-bridges and switched reluctance motors
      • Active high or active low LIN for single input gate driving
    Out of Stock
    Quantity $ per unit Savings
    1-2$29.030%
    2 + Contact sales
    $29.03
    Parameters
    Target ApplicationBrushed DC Motor
    Core ProductL6385E, L6387E, L6388E, L6389E, L6395, L6398, L6399
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The L638xE and L639x are high voltage devices manufactured with the BCD™ “offline” technology. They are single chip half-bridge gate drivers for N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL...
    Read More

    Key features
    Key features
    • Half-bridge configuration
    • High voltage rail up to 600 V
    • Includes samples of each compatible gate driver in SO8 package
      • L6385E, L6387E, L6388E, L6389E,
      • L6395, L6398, L6399
    • Compatible with MOSFETs/IGBTs in
      • DPAK, D2PAK, TO-220, TO-220FP
    • dV/dt transient immunity ± 50 V/ns in full temperature range
    • Integrated bootstrap diode
    • Dedicated high- and low-side driving inputs
    • Compact and simplified layout
    • Gate drivers in the kit features different functionalities and characteristics
      • UVLO on both - high-side and low-side
      • Internal deadtime, or no deadtime
      • Interlocking for anti cross-conduction protection
      • Ability to drive asymmetrical half-bridges and switched reluctance motors
      • Active high or active low LIN for single input gate driving
    Associated products