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EVALSTDRV600HB8

Demonstration board kit for L638xE and L639x high-voltage gate drivers

Target ApplicationBrushed DC Motor
Core ProductL6385E, L6387E, L6388E, L6389E, L6395, L6398, L6399
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The L638xE and L639x are high voltage devices manufactured with the BCD™ “offline” technology. They are single chip half-bridge gate drivers for N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL...
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Key features
  • Half-bridge configuration
  • High voltage rail up to 600 V
  • Includes samples of each compatible gate driver in SO8 package
    • L6385E, L6387E, L6388E, L6389E,
    • L6395, L6398, L6399
  • Compatible with MOSFETs/IGBTs in
    • DPAK, D2PAK, TO-220, TO-220FP
  • dV/dt transient immunity ± 50 V/ns in full temperature range
  • Integrated bootstrap diode
  • Dedicated high- and low-side driving inputs
  • Compact and simplified layout
  • Gate drivers in the kit features different functionalities and characteristics
    • UVLO on both - high-side and low-side
    • Internal deadtime, or no deadtime
    • Interlocking for anti cross-conduction protection
    • Ability to drive asymmetrical half-bridges and switched reluctance motors
    • Active high or active low LIN for single input gate driving
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$30.98
$30.98
Target ApplicationBrushed DC Motor
Core ProductL6385E, L6387E, L6388E, L6389E, L6395, L6398, L6399
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The L638xE and L639x are high voltage devices manufactured with the BCD™ “offline” technology. They are single chip half-bridge gate drivers for N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL...
Read More

Key features
  • Half-bridge configuration
  • High voltage rail up to 600 V
  • Includes samples of each compatible gate driver in SO8 package
    • L6385E, L6387E, L6388E, L6389E,
    • L6395, L6398, L6399
  • Compatible with MOSFETs/IGBTs in
    • DPAK, D2PAK, TO-220, TO-220FP
  • dV/dt transient immunity ± 50 V/ns in full temperature range
  • Integrated bootstrap diode
  • Dedicated high- and low-side driving inputs
  • Compact and simplified layout
  • Gate drivers in the kit features different functionalities and characteristics
    • UVLO on both - high-side and low-side
    • Internal deadtime, or no deadtime
    • Interlocking for anti cross-conduction protection
    • Ability to drive asymmetrical half-bridges and switched reluctance motors
    • Active high or active low LIN for single input gate driving