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EVALSTGAP2HSM

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Demonstration board for STGAP2HSM isolated 4 A single gate driver

Quantity $ per Unit Savings
1$63.500%
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In stock
$63.50
Parameter NameParameter Value
Core ProductSTGAP2HS
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The EVALSTGAP2HSM is an isolated single gate driver.


The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for high power inverter applications such as motor drivers in industrial applications equipped with MOSFET / IGBT power switch.


The separated source and sink outputs allow to independently optimize turn-on and turn-off by using dedicated gate resistors.


The device integrates protection functions: UVLO and thermal shutdown are included to easily design high reliability systems. Dual input pins allow choosing the control signal polarity and also implementing HW interlocking protection in order to avoid cross-conduction in case of controller's malfunction.


The device allows implementing negative gate driving, and the onboard isolated DC-DC converters allow working with optimized driving voltage for MOSFET/IGBT.


The EVALSTGAP2HSM board allows evaluating all the STGAP2HSM features while driving a half-bridge power stage with voltage rating up to 1200 V in TO-220 or TO-247 package.


The board allows easily selecting and modifying the values of relevant external components in order to ease driver performance evaluation under different applicative conditions and fine pre-tuning of the final application’s components.

Key features
  • Board
    • High voltage rail up to 1200 V
    • Negative gate driving
    • Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV maximum isolation
    • 3.3 V VDD logic supply generated onboard or 5 V (externally applied)

    • Easy jumper selection of driving voltage configuration:
      +15/0 V; +15/-3 V; +19/0 V; +19/-3 V;
  • Device
    • Driver current capability: 4 A source/sink @ 25°C
    • Separate sink and source for easy gate driving configuration
    • 6000 V Galvanic isolation
    • Short propagation delay: 75 ns
    • UVLO function
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shutdown protection
    • Standby function