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EVALSTGAP2SICD

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Demonstration board for EVALSTGAP2SICD isolated 4 A half-bridge gate driver

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Parameter NameParameter Value
Core ProductSTGAP2SICD
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
ROHS Compliance GradeEcopack1
GradeIndustrial
Package NameCARD

The EVALSTGAP2SICD is an half bridge evaluation board designed to evaluate the STGAP2SiCD isolated dual gate driver.


The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for high power applications such as motor drivers in industrial applications equipped with SiC power switches.


The device integrates protection functions: dedicated SD and BRAKE pins are available, UVLO and thermal shutdown are included to easily design high reliability systems, and the interlocking function prevents outputs from being high at the same time.


The device allows implementing negative gate driving, and the on-board isolated DC-DC converters allows working with optimized driving voltage for SiC MOSFETs.


The EVALSTGAP2SICD board allows evaluating all the STGAP2SICD features while driving a half-bridge power stage with voltage rating up to 1200 V in TO-220 or TO-247 package.


The board allows easily selecting and modifying the values of relevant external components in order to ease driver performance evaluation under different applicative conditions and fine pre-tuning of final application components.

Key features
  • Board
    • High voltage rail up to 1200 V
    • Negative gate driving
    • On-board isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV maximum isolation
    • VDD logic supplied by on-board generated 3.3 V or VAUX =
      5V
    • Easy jumper selection of driving voltage configuration: +17/0 V; +17/-3 V; +19/0 V; +19/-3 V;
  • Device
    • Driver current capability: 4 A source/sink @ 25°C
    • 4 A Miller CLAMP
    • Short propagation delay: 75 ns
    • UVLO function
    • Configurable interlocking function
    • Dedicated SD and BRAKE pins
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shutdown protection
    • Standby function