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EVALSTGAP2SICS

Demonstration board for STGAP2SICS isolated 4 A single gate drive

Core ProductSTGAP2SICS
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The STGAP2SiCS is an isolated single gate driver.The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device also suitable for high power inverter applications such as motor drivers in industrial applications equipped with SiC power switches.The separate...
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Key features
  • Board
    • High voltage rail up to 1200 V
    • Negative gate driving
    • Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV maximum isolation
    • 3.3 V VDD logic supply generated onboard or 5 V (externally applied)
    • Easy jumper selection of driving voltage configuration: +17/0 V; +17/-3 V; +19/0 V; +19/-3 V
  • Device
    • Driver current capability: 4 A source/sink @ 25 °C
    • Separate sink and source for easy gate driving configuration
    • 6000 V Galvanic isolation
    • Short propagation delay: 75 ns
    • UVLO function
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shut down protection
    • Stand-by function
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$58.07
Core ProductSTGAP2SICS
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The STGAP2SiCS is an isolated single gate driver.The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device also suitable for high power inverter applications such as motor drivers in industrial applications equipped with SiC power switches.The separate...
Read More

Key features
  • Board
    • High voltage rail up to 1200 V
    • Negative gate driving
    • Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV maximum isolation
    • 3.3 V VDD logic supply generated onboard or 5 V (externally applied)
    • Easy jumper selection of driving voltage configuration: +17/0 V; +17/-3 V; +19/0 V; +19/-3 V
  • Device
    • Driver current capability: 4 A source/sink @ 25 °C
    • Separate sink and source for easy gate driving configuration
    • 6000 V Galvanic isolation
    • Short propagation delay: 75 ns
    • UVLO function
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shut down protection
    • Stand-by function