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EVALSTGAP2SICSC

Demonstration board for STGAP2SICSC isolated 4 A single gate drive

Core ProductSTGAP2SICSC
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The STGAP2SiCS is an isolated single gate driver.The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device also suitable for high power inverter applications such as motor drivers in industrial applications equipped with SiC MOSFET power switches.The...
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Key features
  • Board
    • High voltage rail up to 1200 V
    • Negative gate driving
    • Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV maximum isolation
    • 3.3 V VDD logic supply generated onboard or 5 V (externally applied)
    • Easy jumper selection of driving voltage configuration: +17/0 V; +17/-3 V; +19/0 V; +19/-3 V
  • Device
    • Driver current capability: 4 A source/sink @ 25 °C
    • 6000 V Galvanic isolation
    • Short propagation delay: 75 ns
    • UVLO function
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shut down protection
    • Stand-by function
    • 4 A Miller CLAMP
Out of Stock
Core ProductSTGAP2SICSC
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The STGAP2SiCS is an isolated single gate driver.The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device also suitable for high power inverter applications such as motor drivers in industrial applications equipped with SiC MOSFET power switches.The...
Read More

Key features
  • Board
    • High voltage rail up to 1200 V
    • Negative gate driving
    • Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV maximum isolation
    • 3.3 V VDD logic supply generated onboard or 5 V (externally applied)
    • Easy jumper selection of driving voltage configuration: +17/0 V; +17/-3 V; +19/0 V; +19/-3 V
  • Device
    • Driver current capability: 4 A source/sink @ 25 °C
    • 6000 V Galvanic isolation
    • Short propagation delay: 75 ns
    • UVLO function
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shut down protection
    • Stand-by function
    • 4 A Miller CLAMP