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    EVLMG1LPBRDR1

    MASTERGAN1L power module for high efficiency Half-Bridge-GaN-based power supply applications

    Parameters
    Target ApplicationAC-DC PSU for Server and Telecom
    Core ProductMASTERGAN1L
    Input Voltage Max Volt20.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVLMG1LPBRDR1 is a GaN-based half-bridge power module equipped with MASTERGAN1L, which quickly creates new topologies without needing a complete PCB design.The module is fine-tuned to work in an LLC application: in fact, the low side resistors are set to zero and two external body diodes are...
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    Key features
    Key features
    • GaN half-bridge daughter board equipped with MASTERGAN1L, suitable for power applications requiring fast wake up time.
    • Embedded independently adjustable dead times for LIN and HIN signals.
    • On board alternate option for 6 V.
    • Discrete bootstrap diode and capacitor for high frequency solutions.
    • Adjustable low side shunt to serve peak current mode control algorithms.
    • External parallel body diodes to serve LLC application needs.
    • 45 °C/W junction to ambient thermal resistance to evaluate large power topologies.
    • RoHS compliant.
    In stock
    Quantity $ per unit Savings
    1-2$98.650%
    2 + Contact sales
    $98.65
    $98.38
    Parameters
    Target ApplicationAC-DC PSU for Server and Telecom
    Core ProductMASTERGAN1L
    Input Voltage Max Volt20.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVLMG1LPBRDR1 is a GaN-based half-bridge power module equipped with MASTERGAN1L, which quickly creates new topologies without needing a complete PCB design.The module is fine-tuned to work in an LLC application: in fact, the low side resistors are set to zero and two external body diodes are...
    Read More

    Key features
    Key features
    • GaN half-bridge daughter board equipped with MASTERGAN1L, suitable for power applications requiring fast wake up time.
    • Embedded independently adjustable dead times for LIN and HIN signals.
    • On board alternate option for 6 V.
    • Discrete bootstrap diode and capacitor for high frequency solutions.
    • Adjustable low side shunt to serve peak current mode control algorithms.
    • External parallel body diodes to serve LLC application needs.
    • 45 °C/W junction to ambient thermal resistance to evaluate large power topologies.
    • RoHS compliant.
    Associated products