Toggle Nav
Search
Compare ()
Cart 0
Menu
Account
Settings
  • Language
    English
    • Currency
    USD

    Shipping Delays — We are currently experiencing unusually high order volume, which is affecting order processing. As a result, shipments may be delayed. We are working to get orders out as quickly as possible.

    main product photo

    Active

    EVLSTGAP3S3IF

    Half-bridge evaluation board for STGAP3S3IF IGBT galvanically isolated gate driver with protections

    Parameters
    Core ProductSTGAP3S3IFTR
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVLSTGAP3S3IF is a half-bridge evaluation board designed to evaluate the STGAP3S3IF isolated single gate driver.The STGAP3S3IF is characterized by 3 A current capability, rail-to-rail outputs, and optimized UVLO and DESAT protection thresholds for IGBTs, which makes the device optimal for...
    Read More

    Key features
    Key features
    • Board
      • Half-bridge configuration
      • High-voltage rail up to 650 V (limited by the IGBT’s and
        capacitor’s rating)
      • STGP10M65DF2 IGBTs: 650 V, 10 A
      • Compatible with 5 V and 3.3 V MCUs
      • VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V
      • Onboard isolated DC-DC converters to supply high-side and
        low-side gate drivers, fed by VAUX = 5 V, with 5.4 kVpk maximum isolation
      • Easy jumper selection of driving voltage configuration:+15/0 V; +15/-4.7 V; +12/0 V; +12/-4.7
        V
      • Fault LED indicators
      • Maximum working voltage across isolation: 650 V
      • RoHS compliant
    • STGAP3S3IF device
      • Driver current capability: 3 A
        source/sink @ 25 °C
      • 75 ns input-output propagation delay
      • Internal Miller CLAMP
      • UVLO function
      • Desaturation protection
      • Gate driving voltage up to 32 V
      • Negative gate driving voltage
      • 3.3 V, 5 V TTL/CMOS inputs with
        hysteresis
      • Temperature shutdown protection
      • Reinforced galvanic isolation:Isolation voltage VISO = 5.7 kVRMS (UL 1577)Transient overvoltage VIOTM = 8 kVPEAK (IEC 60747-17)Max. repetitive isolation voltage VIORM = 1.2 kVPEAK (IEC 60747-17)
    In stock
    Quantity $ per unit Savings
    1-2$58.442%
    2 + Contact sales
    $58.44
    $57.27
    Parameters
    Core ProductSTGAP3S3IFTR
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVLSTGAP3S3IF is a half-bridge evaluation board designed to evaluate the STGAP3S3IF isolated single gate driver.The STGAP3S3IF is characterized by 3 A current capability, rail-to-rail outputs, and optimized UVLO and DESAT protection thresholds for IGBTs, which makes the device optimal for...
    Read More

    Key features
    Key features
    • Board
      • Half-bridge configuration
      • High-voltage rail up to 650 V (limited by the IGBT’s and
        capacitor’s rating)
      • STGP10M65DF2 IGBTs: 650 V, 10 A
      • Compatible with 5 V and 3.3 V MCUs
      • VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V
      • Onboard isolated DC-DC converters to supply high-side and
        low-side gate drivers, fed by VAUX = 5 V, with 5.4 kVpk maximum isolation
      • Easy jumper selection of driving voltage configuration:+15/0 V; +15/-4.7 V; +12/0 V; +12/-4.7
        V
      • Fault LED indicators
      • Maximum working voltage across isolation: 650 V
      • RoHS compliant
    • STGAP3S3IF device
      • Driver current capability: 3 A
        source/sink @ 25 °C
      • 75 ns input-output propagation delay
      • Internal Miller CLAMP
      • UVLO function
      • Desaturation protection
      • Gate driving voltage up to 32 V
      • Negative gate driving voltage
      • 3.3 V, 5 V TTL/CMOS inputs with
        hysteresis
      • Temperature shutdown protection
      • Reinforced galvanic isolation:Isolation voltage VISO = 5.7 kVRMS (UL 1577)Transient overvoltage VIOTM = 8 kVPEAK (IEC 60747-17)Max. repetitive isolation voltage VIORM = 1.2 kVPEAK (IEC 60747-17)