Toggle Nav
Search
Compare ()
Cart 0
Menu
Account
Settings
  • Language
    English
    • Currency
    USD
    main product photo

    Active

    New

    EVLSTGAP3S6I

    Half-bridge evaluation board for STGAP3S6I IGBT galvanically isolated gate driver with protectioN

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVLSTGAP3S6I is a half-bridge evaluation board designed to evaluate the STGAP3S6I isolated single gate driver.The STGAP3S6I is characterized by 6 A current capability, rail-to-rail outputs and optimized UVLO and DESAT protection thresholds for IGBTs, which makes the device optimal for...
    Read More

    Key features
    Key features
    • Board
      • Half-bridge configuration
      • High-voltage rail up to 650 V (limited by the IGBT’s and
        capacitor’s rating)
      • STGB30M65DFB2 IGBTs: 650 V, 30 A
      • Compatible with 5 V and 3.3 V MCUs
      • VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V
      • Onboard isolated DC-DC converters to supply high-side and
        low-side gate drivers, fed by VAUX = 5 V, with 5.4 kVpk maximum isolation
      • Easy jumper selection of driving voltage configuration:+15/0 V; +15/-4.7 V; +12/0 V; +12/-4.7
        V
      • Fault LED indicators
      • Maximum working voltage across isolation: 650 V
      • RoHS compliant
    • STGAP3S6I device
      • Driver current capability: 6 A
        source/sink @ 25 °C
      • 75 ns input-output propagation delay
      • Miller CLAMP driver for external
        N-channel MOSFET
      • Adjustable soft turn-off function
      • UVLO function
      • Desaturation protection
      • Gate driving voltage up to 32 V
      • Negative gate driving voltage
      • 3.3 V, 5 V TTL/CMOS inputs with
        hysteresis
      • Temperature shutdown protection
      • Reinforced galvanic isolation:Isolation voltage VISO = 5.7 kVRMS (UL 1577)Transient overvoltage VIOTM = 8 kVPEAK (IEC 60747-17)Max. repetitive isolation voltage VIORM = 1.2 kVPEAK (IEC 60747-17)
    In stock
    Quantity $ per unit Savings
    1-500$57.270%
    500 + Contact sales
    $57.27
    $57.27
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVLSTGAP3S6I is a half-bridge evaluation board designed to evaluate the STGAP3S6I isolated single gate driver.The STGAP3S6I is characterized by 6 A current capability, rail-to-rail outputs and optimized UVLO and DESAT protection thresholds for IGBTs, which makes the device optimal for...
    Read More

    Key features
    Key features
    • Board
      • Half-bridge configuration
      • High-voltage rail up to 650 V (limited by the IGBT’s and
        capacitor’s rating)
      • STGB30M65DFB2 IGBTs: 650 V, 30 A
      • Compatible with 5 V and 3.3 V MCUs
      • VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V
      • Onboard isolated DC-DC converters to supply high-side and
        low-side gate drivers, fed by VAUX = 5 V, with 5.4 kVpk maximum isolation
      • Easy jumper selection of driving voltage configuration:+15/0 V; +15/-4.7 V; +12/0 V; +12/-4.7
        V
      • Fault LED indicators
      • Maximum working voltage across isolation: 650 V
      • RoHS compliant
    • STGAP3S6I device
      • Driver current capability: 6 A
        source/sink @ 25 °C
      • 75 ns input-output propagation delay
      • Miller CLAMP driver for external
        N-channel MOSFET
      • Adjustable soft turn-off function
      • UVLO function
      • Desaturation protection
      • Gate driving voltage up to 32 V
      • Negative gate driving voltage
      • 3.3 V, 5 V TTL/CMOS inputs with
        hysteresis
      • Temperature shutdown protection
      • Reinforced galvanic isolation:Isolation voltage VISO = 5.7 kVRMS (UL 1577)Transient overvoltage VIOTM = 8 kVPEAK (IEC 60747-17)Max. repetitive isolation voltage VIORM = 1.2 kVPEAK (IEC 60747-17)
    Associated products