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    EVLSTGAP3SXS-H

    Half-bridge evaluation board for STGAP3SXS SiC MOSFET galvanic isolated gate driver with protections

    Parameters
    Core ProductSTGAP3SXSTR
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVLSTGAP3SXS-H is a half-bridge evaluation board designed to evaluate the STGAP3SXS isolated single gate driver.The STGAP3SXS is characterized by 10 A current capability, rail-to-rail outputs and optimized UVLO and DESAT protection thresholds for SiC MOSFETS, which makes the device optimal for...
    Read More

    Key features
    Key features
    • Board
      • Half-bridge configuration
      • High-voltage rail up to 520 V (limited by the MOSFET’s and
        capacitor’s rating)
      • SCTWA70N120G2V-4 SiC MOSFETs: 1200 V, 30 mΩ, 91 A
      • Compatible with 5 V and 3.3 V MCUs
      • VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V
      • Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kVpk maximum isolation
      • Easy jumper selection of driving voltage configuration:+19/0 V; +19/-4.7 V;
        +17/0 V; +17/-4.7 V
      • Fault LED indicators
      • Maximum working voltage across isolation: 1200 V
      • RoHS compliant
    • STGAP3SXS device
      • Driver current capability: 10 A source/sink @ 25 °C
      • 75 ns input-output propagation delay
      • Miller CLAMP driver for external N-channel MOSFET
      • Adjustable soft turn-off function
      • UVLO function
      • Desaturation protection
      • Gate driving voltage up to 32 V
      • Negative gate driving voltage
      • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
      • Temperature shutdown protection
      • Reinforced galvanic isolation:Isolation voltage VISO = 5.7 kVRMS (UL 1577)Transient overvoltage VIOTM = 8 kVPEAK (IEC 60747-17)Max. repetitive isolation voltage VIORM = 1.2 kVPEAK (IEC 60747-17)
    In stock
    Quantity $ per unit Savings
    1-2$59.232%
    2 + Contact sales
    $59.23
    $58.05
    Parameters
    Core ProductSTGAP3SXSTR
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVLSTGAP3SXS-H is a half-bridge evaluation board designed to evaluate the STGAP3SXS isolated single gate driver.The STGAP3SXS is characterized by 10 A current capability, rail-to-rail outputs and optimized UVLO and DESAT protection thresholds for SiC MOSFETS, which makes the device optimal for...
    Read More

    Key features
    Key features
    • Board
      • Half-bridge configuration
      • High-voltage rail up to 520 V (limited by the MOSFET’s and
        capacitor’s rating)
      • SCTWA70N120G2V-4 SiC MOSFETs: 1200 V, 30 mΩ, 91 A
      • Compatible with 5 V and 3.3 V MCUs
      • VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V
      • Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kVpk maximum isolation
      • Easy jumper selection of driving voltage configuration:+19/0 V; +19/-4.7 V;
        +17/0 V; +17/-4.7 V
      • Fault LED indicators
      • Maximum working voltage across isolation: 1200 V
      • RoHS compliant
    • STGAP3SXS device
      • Driver current capability: 10 A source/sink @ 25 °C
      • 75 ns input-output propagation delay
      • Miller CLAMP driver for external N-channel MOSFET
      • Adjustable soft turn-off function
      • UVLO function
      • Desaturation protection
      • Gate driving voltage up to 32 V
      • Negative gate driving voltage
      • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
      • Temperature shutdown protection
      • Reinforced galvanic isolation:Isolation voltage VISO = 5.7 kVRMS (UL 1577)Transient overvoltage VIOTM = 8 kVPEAK (IEC 60747-17)Max. repetitive isolation voltage VIORM = 1.2 kVPEAK (IEC 60747-17)
    Associated products