EVLSTGAP3SXS-H

Half-bridge evaluation board for STGAP3SXS SiC MOSFETs isolated gate driver with protections

Parameters

Core Product	2STF1360, SCTWA70N120G2V-4, STGAP3SXS, LDK220M-R, STPS2L40ZFY, STL7N6F7
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	CARD

Description

The EVLSTGAP3SXS-H is a half-bridge evaluation board designed to evaluate the STGAP3SXS isolated single gate driver.The STGAP3SXS is characterized by 10 A current capability, rail-to-rail outputs and optimized UVLO and DESAT protection thresholds for SiC MOSFETS, which makes the device optimal for...
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Key features

Key features
Board Half-bridge configuration High-voltage rail up to 520 V (limited by the MOSFET’s and capacitor’s rating) SCTWA70N120G2V-4 SiC MOSFETs: 1200 V, 30 mΩ, 91 A Compatible with 5 V and 3.3 V MCUs VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV_pk maximum isolation Easy jumper selection of driving voltage configuration:+19/0 V; +19/-4.7 V; +17/0 V; +17/-4.7 V Fault LED indicators Maximum working voltage across isolation: 1200 V RoHS compliant STGAP3SXS device Driver current capability: 10 A source/sink @ 25 °C 75 ns input-output propagation delay Miller CLAMP driver for external N-channel MOSFET Adjustable soft turn-off function UVLO function Desaturation protection Gate driving voltage up to 32 V Negative gate driving voltage 3.3 V, 5 V TTL/CMOS inputs with hysteresis Temperature shutdown protection Reinforced galvanic isolation:Isolation voltage V_ISO = 5.7 kV_RMS (UL 1577)Transient overvoltage V_IOTM = 8 kV_PEAK (IEC 60747-17)Max. repetitive isolation voltage V_IORM = 1.2 kV_PEAK (IEC 60747-17)

In stock

Quantity	$ per unit	Savings
1-2	$55.14	0%
2 +	Contact sales

$55.14

$55.13

Parameters

Core Product	2STF1360, SCTWA70N120G2V-4, STGAP3SXS, LDK220M-R, STPS2L40ZFY, STL7N6F7
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	CARD

Description

Key features

Key features
Board Half-bridge configuration High-voltage rail up to 520 V (limited by the MOSFET’s and capacitor’s rating) SCTWA70N120G2V-4 SiC MOSFETs: 1200 V, 30 mΩ, 91 A Compatible with 5 V and 3.3 V MCUs VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV_pk maximum isolation Easy jumper selection of driving voltage configuration:+19/0 V; +19/-4.7 V; +17/0 V; +17/-4.7 V Fault LED indicators Maximum working voltage across isolation: 1200 V RoHS compliant STGAP3SXS device Driver current capability: 10 A source/sink @ 25 °C 75 ns input-output propagation delay Miller CLAMP driver for external N-channel MOSFET Adjustable soft turn-off function UVLO function Desaturation protection Gate driving voltage up to 32 V Negative gate driving voltage 3.3 V, 5 V TTL/CMOS inputs with hysteresis Temperature shutdown protection Reinforced galvanic isolation:Isolation voltage V_ISO = 5.7 kV_RMS (UL 1577)Transient overvoltage V_IOTM = 8 kV_PEAK (IEC 60747-17)Max. repetitive isolation voltage V_IORM = 1.2 kV_PEAK (IEC 60747-17)