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    EVSPIN32F06Q1S3

    3-phase inverter based on STSPIN32F0601Q with 3-shunt topology

    Parameters
    ECCN US3A991.a.2
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVSPIN32F06Q1S3 board is a 3-phase complete inverter based on the STSPIN32F0601 controller, QFN 72L package version, which embeds a 3‑phase 600 V gate driver and a Cortex®‑M0 STM32 MCU. The power stage features STGD6M65DF2 IGBTs, but can be populated with any IGBT or Power MOSFET in DPAK...
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    Key features
    Key features
    • Input voltage from 35 VAC (50 VDC) to 280 VAC (400 VDC)
    • Suitable for applications up to 300 W
    • STGD6M65DF2 IGBTs power stage featuring:
      • V(BR)CES = 650 V
      • VCE(sat) = 1.55 V @ IC = 6 A
    • Overcurrent threshold set to 4.5 Apeak
    • Dual footprint for IGBT/MOSFET package:
      • DPAK or PowerFlat 8x8 HV
    • 3-shunt current sensing, suitable for: sensored or sensorless vector control - FOC algorithm with 3-shunt sensing
    • Smart shutdown overcurrent protection
    • Digital Hall sensors and encoder input
    • Bus voltage sensing
    • 15 V VCC and 3.3 V VDD supplies
    • Embedded ST-LINK/V2-1
    • Easy user interface with buttons and trimmer
    • RoHS compliant
    In stock
    Quantity $ per unit Savings
    1$108.100%
    1 + Contact sales
    $108.10
    $108.10
    Parameters
    ECCN US3A991.a.2
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVSPIN32F06Q1S3 board is a 3-phase complete inverter based on the STSPIN32F0601 controller, QFN 72L package version, which embeds a 3‑phase 600 V gate driver and a Cortex®‑M0 STM32 MCU. The power stage features STGD6M65DF2 IGBTs, but can be populated with any IGBT or Power MOSFET in DPAK...
    Read More

    Key features
    Key features
    • Input voltage from 35 VAC (50 VDC) to 280 VAC (400 VDC)
    • Suitable for applications up to 300 W
    • STGD6M65DF2 IGBTs power stage featuring:
      • V(BR)CES = 650 V
      • VCE(sat) = 1.55 V @ IC = 6 A
    • Overcurrent threshold set to 4.5 Apeak
    • Dual footprint for IGBT/MOSFET package:
      • DPAK or PowerFlat 8x8 HV
    • 3-shunt current sensing, suitable for: sensored or sensorless vector control - FOC algorithm with 3-shunt sensing
    • Smart shutdown overcurrent protection
    • Digital Hall sensors and encoder input
    • Bus voltage sensing
    • 15 V VCC and 3.3 V VDD supplies
    • Embedded ST-LINK/V2-1
    • Easy user interface with buttons and trimmer
    • RoHS compliant