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    EVSPIN32F06Q2S1

    3-phase inverter based on STSPIN32F0602

    Parameters
    ECCN US3A991.a.2
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVSPIN32F06Q2S1 board is a 3-phase complete inverter based on the STSPIN32F0602 controller, which embeds a 3‑phase 600 V gate driver and a Cortex®-M0 STM32 MCU. The power stage features STD18N65M5 MOSFET, but can be populated with any IGBT or Power MOSFET in DPAK or powerFLAT 8x8 HV package....
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    Key features
    Key features
    • Input voltage from 35 VAC (50 VDC) to 280 VAC (400 VDC)
    • Suitable for applications up to 300 W
    • STD18N65M5 MOS power stage featuring:
      • V(DS) @ TJmax= 710 V
      • RDS(on) max. = 0.220 Ω
    • Overcurrent threshold set to 8.5 Apeak
    • Dual footprint for IGBT/MOSFET package:
      • DPAK or PowerFlat 8x8 HV
    • Single-shunt current sensing, suitable for:
      • Sensored or sensorless 6-step algorithm
      • Sensored or sensorless single-shunt vector (FOC) algorithm
    • Smart shutdown overcurrent protection
    • Digital Hall sensors and encoder input
    • Bus voltage sensing
    • 15 V VCC and 3.3 V VDD supplies
    • Embedded ST-LINK/V2-1
    • Easy user interface with buttons and trimmer
    • RoHS compliant
    In stock
    Quantity $ per unit Savings
    1-2$120.150%
    2 + Contact sales
    $120.15
    $120.15
    Parameters
    ECCN US3A991.a.2
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVSPIN32F06Q2S1 board is a 3-phase complete inverter based on the STSPIN32F0602 controller, which embeds a 3‑phase 600 V gate driver and a Cortex®-M0 STM32 MCU. The power stage features STD18N65M5 MOSFET, but can be populated with any IGBT or Power MOSFET in DPAK or powerFLAT 8x8 HV package....
    Read More

    Key features
    Key features
    • Input voltage from 35 VAC (50 VDC) to 280 VAC (400 VDC)
    • Suitable for applications up to 300 W
    • STD18N65M5 MOS power stage featuring:
      • V(DS) @ TJmax= 710 V
      • RDS(on) max. = 0.220 Ω
    • Overcurrent threshold set to 8.5 Apeak
    • Dual footprint for IGBT/MOSFET package:
      • DPAK or PowerFlat 8x8 HV
    • Single-shunt current sensing, suitable for:
      • Sensored or sensorless 6-step algorithm
      • Sensored or sensorless single-shunt vector (FOC) algorithm
    • Smart shutdown overcurrent protection
    • Digital Hall sensors and encoder input
    • Bus voltage sensing
    • 15 V VCC and 3.3 V VDD supplies
    • Embedded ST-LINK/V2-1
    • Easy user interface with buttons and trimmer
    • RoHS compliant