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    EVSTDRIVEG600DM

    Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with MDmesh DM2 Power MOSFET

    Parameters
    Core ProductSTDRIVEG600
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage N-channel power MOSFETs or enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V.The EVSTDRIVEG600DM board is easy to use and quick and adapt for...
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    Key features
    Key features
    • Half-Bridge topology featuring 600V STDRIVEG600 gate driver
    • Equipped with 115 mΩ 600V MDmesh DM2 Power MOSFET STL33N60DM2 with fast recovery diode.
    • MOSFET in PowerFLAT 8x8 HV package with Kelvin source or alternative DPAK footprint.
    • HV bus up to 450V (capacitor rating limited)
    • 4.75 to 20 V VCC gate driver supply voltage
    • On-board adjustable deadtime generator to convert single PWM signal into independent high-side and low-side deadtimes.
    • Separated inputs with external deadtime can also be used
    • On-board 3.3V regulator for external circuitry supply
    • 20°C/W junction-to-ambient thermal resistance to evaluate large power topologies
    • Optional low-side shunt
    • RoHS compliant.
    Out of Stock
    Quantity $ per unit Savings
    1$80.180%
    1 + Contact sales
    $80.18
    Parameters
    Core ProductSTDRIVEG600
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage N-channel power MOSFETs or enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V.The EVSTDRIVEG600DM board is easy to use and quick and adapt for...
    Read More

    Key features
    Key features
    • Half-Bridge topology featuring 600V STDRIVEG600 gate driver
    • Equipped with 115 mΩ 600V MDmesh DM2 Power MOSFET STL33N60DM2 with fast recovery diode.
    • MOSFET in PowerFLAT 8x8 HV package with Kelvin source or alternative DPAK footprint.
    • HV bus up to 450V (capacitor rating limited)
    • 4.75 to 20 V VCC gate driver supply voltage
    • On-board adjustable deadtime generator to convert single PWM signal into independent high-side and low-side deadtimes.
    • Separated inputs with external deadtime can also be used
    • On-board 3.3V regulator for external circuitry supply
    • 20°C/W junction-to-ambient thermal resistance to evaluate large power topologies
    • Optional low-side shunt
    • RoHS compliant.
    Associated products