Toggle Nav
Search
Compare ()
Cart 0
Menu
Account
Settings
  • Language
    English
    • Currency
    USD

    🎅 Early holiday celebration: Get 5% discount on every order till Dec. 14th! 🎅 Shop now!

    🚀 New Platform Beta is Live! Expect some delays in processing orders! Apologies for the inconveniences! 🚀 Order now!

    main product photo

    Active

    EVSTDRIVEG600DM

    Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with 115 mΩ, 600V MDmesh DM2 Power MOSFET

    Parameters
    Core ProductSTDRIVEG600
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage N-channel power MOSFETs or enhanced mode GaN HEMTs.It features separated high current sink/source gate driving pins, an integrated bootstrap diode, overtemperature, and allows supplying external switches up to...
    Read More

    Key features
    Key features
    • Half-bridge topology featuring 600 V STDRIVEG600 gate driver
    • Equipped with 115 mΩ, 600 V MDmesh DM2 Power MOSFET STL33N60DM2 with fast recovery diode
    • MOSFET in PowerFLAT 8x8 HV package with Kelvin source or alternative DPAK footprint
    • HV bus up to 450 V (capacitor rating limited)
    • 4.75 to 20 V VCC gate driver supply voltage
    • On-board adjustable deadtime generator to convert single PWM signal into independent high-side and low-side deadtime
    • Separated inputs with external deadtime can also be used
    • On-board 3.3 V regulator for external circuitry supply
    • 20°C/W junction-to-ambient thermal resistance to evaluate large power topologies
    • Optional low-side shunt
    • RoHS compliant
    Out of Stock
    Quantity $ per unit Savings
    1$81.021%
    1 + Contact sales
    $80.18
    Parameters
    Core ProductSTDRIVEG600
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage N-channel power MOSFETs or enhanced mode GaN HEMTs.It features separated high current sink/source gate driving pins, an integrated bootstrap diode, overtemperature, and allows supplying external switches up to...
    Read More

    Key features
    Key features
    • Half-bridge topology featuring 600 V STDRIVEG600 gate driver
    • Equipped with 115 mΩ, 600 V MDmesh DM2 Power MOSFET STL33N60DM2 with fast recovery diode
    • MOSFET in PowerFLAT 8x8 HV package with Kelvin source or alternative DPAK footprint
    • HV bus up to 450 V (capacitor rating limited)
    • 4.75 to 20 V VCC gate driver supply voltage
    • On-board adjustable deadtime generator to convert single PWM signal into independent high-side and low-side deadtime
    • Separated inputs with external deadtime can also be used
    • On-board 3.3 V regulator for external circuitry supply
    • 20°C/W junction-to-ambient thermal resistance to evaluate large power topologies
    • Optional low-side shunt
    • RoHS compliant
    Associated products