EVSTDRIVEG600DM

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Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with MDmesh DM2 Power MOSFET

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Parameter NameParameter Value
Core ProductSTDRIVEG600
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
ROHS Compliance GradeEcopack1
GradeIndustrial
Package NameCARD
Key features
  • Half-Bridge topology featuring 600V STDRIVEG600 gate driver
  • Equipped with 115 mΩ 600V MDmesh DM2 Power MOSFET STL33N60DM2 with fast recovery diode.
  • MOSFET in PowerFLAT 8x8 HV package with Kelvin source or alternative DPAK footprint.
  • HV bus up to 450V (capacitor rating limited)
  • 4.75 to 20 V VCC gate driver supply voltage
  • On-board adjustable deadtime generator to convert single PWM signal into independent high-side and low-side deadtimes.
  • Separated inputs with external deadtime can also be used
  • On-board 3.3V regulator for external circuitry supply
  • 20°C/W junction-to-ambient thermal resistance to evaluate large power topologies
  • Optional low-side shunt
  • RoHS compliant.