Active

EVSTGAP2GS

Demonstration board for STGAP2GS galvanically isolated single gate driver with e-mode GaN transistor

Core ProductSGT120R65AL, EVSTGAP2GS
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The EVSTGAP2GS is a half bridge evaluation board designed to evaluate the STGAP2GS isolated single gate driver.The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power inverter applications such as power...
Read More

Key features
  • Board
    • Half bridge configuration, high voltage rail up to 650
      V
    • SGT120R65AL: 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
    • Negative gate driving
    • On-board isolated DC-DC converters to supply high-side and
      low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV maximum isolation
    • VDD logic supplied by on-board 3.3 V or VAUX = 5 V
    • Easy jumper selection of driving voltage configuration:
      +6/0 V; +6/-3 V
  • Device
    • High voltage rail up to 1200 V
    • Driver current capability: 2 A / 3 A source/sink @ 25 °C,
      VH = 6 V
    • Separate sink and source for easy gate driving configuration
    • Input-output propagation delay: 45 ns
    • UVLO function optimized for GaN
    • Gate driving voltage up to 15 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shut down protection
In stock
Quantity $ per unit Savings
1-10$95.550%
Contact sales
$95.55
$95.55
Core ProductSGT120R65AL, EVSTGAP2GS
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The EVSTGAP2GS is a half bridge evaluation board designed to evaluate the STGAP2GS isolated single gate driver.The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power inverter applications such as power...
Read More

Key features
  • Board
    • Half bridge configuration, high voltage rail up to 650
      V
    • SGT120R65AL: 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
    • Negative gate driving
    • On-board isolated DC-DC converters to supply high-side and
      low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV maximum isolation
    • VDD logic supplied by on-board 3.3 V or VAUX = 5 V
    • Easy jumper selection of driving voltage configuration:
      +6/0 V; +6/-3 V
  • Device
    • High voltage rail up to 1200 V
    • Driver current capability: 2 A / 3 A source/sink @ 25 °C,
      VH = 6 V
    • Separate sink and source for easy gate driving configuration
    • Input-output propagation delay: 45 ns
    • UVLO function optimized for GaN
    • Gate driving voltage up to 15 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shut down protection