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    EVSTGAP2GSN

    Demonstration board for STGAP2GSN isolated single gate driver with e-mode GaN transistor

    Parameters
    Core ProductSGT120R65AL, STGAP2GSN
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVSTGAP2GSN is a half bridge evaluation board designed to evaluate the STGAP2GSN isolated single gate driver.The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power inverter applications such as...
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    Key features
    Key features
    • Board
      • Half bridge configuration, high voltage rail
        up to 650 V
      • SGT120R65AL: 650 V, 75 mOhm typ., 15 A, e-mode
        PowerGaN transistor
      • Negative
        gate driving
      • On board isolated DC-DC converters to supply high-side and
        low-side gate drivers, fed by VAUX = 5 V, with 1.5
        kV maximum isolation
      • VDD logic supplied by on-board 3.3 V or VAUX = 5 V
      • Easy jumper selection of driving voltage configuration:
        +6/0 V; +6/-3 V
    • Device
      • 1700 V functional isolation
      • Driver current capability: 2 A / 3 A source/sink @ 25 °C,
        VH = 6 V
      • Separate sink and source for easy gate driving
        configuration
      • Input-output propagation delay: 45 ns
      • UVLO function optimized for GaN
      • Gate driving voltage up to 15 V
      • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
      • Temperature shut down protection
    In stock
    Quantity $ per unit Savings
    1-2$95.550%
    2 + Contact sales
    $95.55
    $95.55
    Parameters
    Core ProductSGT120R65AL, STGAP2GSN
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameCARD
    Description

    The EVSTGAP2GSN is a half bridge evaluation board designed to evaluate the STGAP2GSN isolated single gate driver.The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power inverter applications such as...
    Read More

    Key features
    Key features
    • Board
      • Half bridge configuration, high voltage rail
        up to 650 V
      • SGT120R65AL: 650 V, 75 mOhm typ., 15 A, e-mode
        PowerGaN transistor
      • Negative
        gate driving
      • On board isolated DC-DC converters to supply high-side and
        low-side gate drivers, fed by VAUX = 5 V, with 1.5
        kV maximum isolation
      • VDD logic supplied by on-board 3.3 V or VAUX = 5 V
      • Easy jumper selection of driving voltage configuration:
        +6/0 V; +6/-3 V
    • Device
      • 1700 V functional isolation
      • Driver current capability: 2 A / 3 A source/sink @ 25 °C,
        VH = 6 V
      • Separate sink and source for easy gate driving
        configuration
      • Input-output propagation delay: 45 ns
      • UVLO function optimized for GaN
      • Gate driving voltage up to 15 V
      • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
      • Temperature shut down protection