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EVSTGAP2SICSANC

Demonstration board for STGAP2SICSANC isolated single gate driver

ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The EVSTGAP2SICSANC is a half bridge evaluation board designed to evaluate the STGAP2SICSANC isolated single gate driver.The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for mid and high power inverter applications such as motor...
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Key features
  • Board
    • Half
      bridge configuration, high voltage rail up to 520
      V
    • SCT055H65G3AG:  650 V, 58 mΩ typ., 30 A 3rd
      generation SiC MOSFET
    • Negative
      gate driving
    • On board
      isolated DC-DC converters to supply high-side and
      low-side gate drivers, fed by VAUX = 5 V, with 5.2
      kV maximum isolation
    • VDD logic supplied by on-board generated 3.3 V or VAUX = 5
      V
    • Easy jumper selection of driving voltage configuration:
      +17/0 V; +17/-3 V; +19/0 V; +19/-3 V
  • Device
    • AEC-Q100 qualified
    • High voltage rail up to 1700 V
    • Driver current capability: 4 A source/sink @
      25 °C
    • 4 A Miller CLAMP
    • Overall input-output propagation delay: 45 ns
    • UVLO function
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shut down protection
    • UL 1577 recognized
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$55.37
$55.37
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantEcopack1
GradeIndustrial
Package NameCARD

The EVSTGAP2SICSANC is a half bridge evaluation board designed to evaluate the STGAP2SICSANC isolated single gate driver.The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for mid and high power inverter applications such as motor...
Read More

Key features
  • Board
    • Half
      bridge configuration, high voltage rail up to 520
      V
    • SCT055H65G3AG:  650 V, 58 mΩ typ., 30 A 3rd
      generation SiC MOSFET
    • Negative
      gate driving
    • On board
      isolated DC-DC converters to supply high-side and
      low-side gate drivers, fed by VAUX = 5 V, with 5.2
      kV maximum isolation
    • VDD logic supplied by on-board generated 3.3 V or VAUX = 5
      V
    • Easy jumper selection of driving voltage configuration:
      +17/0 V; +17/-3 V; +19/0 V; +19/-3 V
  • Device
    • AEC-Q100 qualified
    • High voltage rail up to 1700 V
    • Driver current capability: 4 A source/sink @
      25 °C
    • 4 A Miller CLAMP
    • Overall input-output propagation delay: 45 ns
    • UVLO function
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shut down protection
    • UL 1577 recognized