GANSPIN611TR

GaN-based motion control is the focus of the GaNSPIN platform. Unlike many general-purpose solutions or those tailored for power conversion, the GaNSPIN series is specifically engineered to meet the peculiar demands of motion control systems.

The GANSPIN611 is an advanced power system-in-package integrating two enhancement mode GaN transistors in half-bridge configuration driven by a state-of-the-art high-voltage, high-frequency gate driver.

The integrated power GaNs have RDS(ON) of 138 mΩ and 650 V drain source breakdown voltage, while the high-side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The GANSPIN611, being designed for motion control, optimizes the output dV/dt to 10 V/ns typ. for both hard-on and hard-off. This is required in motor control for EMI, motor winding, and ball bearing reliability.

Robustness and reliability are also distinctive factors of the GaNSPIN series. Embedding advanced protections, GaNSPIN devices ensure the best possible system robustness. SmartShutdown overcurrent protection delivers the fastest response possible thanks to embedded logic and dedicated fast comparators.

The GANSPIN series also features linear regulators on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The UVLO is fine-tuned for motion control for optimal performances.

The GANSPIN611 is available in a compact 9x9x1 mm QFN package and operates in the industrial temperature range, -40 °C to 125 °C.

The GaNSPIN611 is pin-to-pin with GaNSPIN612 (RDS(ON) of 270 mΩ) to maximize scalability in a platform approach.