GANSPIN612

GANSPIN612

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GANSPIN612TR

High-voltage half-bridge GaN motor driver

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameTFQFPN 9X9X1.05 35L PITCH 0.6MM

GaN-based motion control is the focus of the GaNSPIN platform. Unlike many general-purpose solutions or those tailored for power conversion, the GaNSPIN series is specifically engineered to meet the peculiar demands of motion control systems.The GANSPIN612 is an advanced power system-in-package...
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Key features
  • Power system-in-package family integrating high-voltage GaN transistors in half-bridge configuration with high-voltage gate driver:
    • RDS(ON) =
      270 mΩ
    • IDS(MAX) =
      5.5 A
  • Reverse conduction capability and zero reverse recovery loss
  • 10 V/ns typ. output dV/dt in both hard-on and hard-off, tailored for motor control
  • Externally adjustable turn-on dV/dt
  • Linear regulators to regulate high-side and low-side driver supply voltage
  • Internal bootstrap diode
  • Comparator for overcurrent detection with Smart Shutdown function
  • UVLO protection on VCC, VHS and
    VLS
  • Interlocking function, shutdown, standby and fault pins
  • 55 ns gate driver leading to overall 150 ns typ. output propagation delay
  • 3.3 V to 20 V compatible inputs with hysteresis and pull-down
In stock
Quantity $ per unit Savings
1-9$8.310%
10-24$6.3923%
25-99$5.9329%
100-249$5.2936%
250-499$4.3048%
500$4.1850%
Contact sales
$8.31
$8.31
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameTFQFPN 9X9X1.05 35L PITCH 0.6MM

GaN-based motion control is the focus of the GaNSPIN platform. Unlike many general-purpose solutions or those tailored for power conversion, the GaNSPIN series is specifically engineered to meet the peculiar demands of motion control systems.The GANSPIN612 is an advanced power system-in-package...
Read More

Key features
  • Power system-in-package family integrating high-voltage GaN transistors in half-bridge configuration with high-voltage gate driver:
    • RDS(ON) =
      270 mΩ
    • IDS(MAX) =
      5.5 A
  • Reverse conduction capability and zero reverse recovery loss
  • 10 V/ns typ. output dV/dt in both hard-on and hard-off, tailored for motor control
  • Externally adjustable turn-on dV/dt
  • Linear regulators to regulate high-side and low-side driver supply voltage
  • Internal bootstrap diode
  • Comparator for overcurrent detection with Smart Shutdown function
  • UVLO protection on VCC, VHS and
    VLS
  • Interlocking function, shutdown, standby and fault pins
  • 55 ns gate driver leading to overall 150 ns typ. output propagation delay
  • 3.3 V to 20 V compatible inputs with hysteresis and pull-down