GH50H65DWB2-7AG

Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheeling SiC diode in an H2PAK-7 package

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack1
Grade	Automotive
Package Name	H2PAK-7

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching...
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Key features

Key features
AEC-Q101 qualified Maximum junction temperature: T_J = 175 °C High speed switching series Minimized tail current Low V_CE(sat) = 1.6 V (typ.) @ I_C = 50 A Tight parameter distribution Low thermal resistance Positive V_CE(sat) temperature coefficient Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration Excellent switching performance thanks to the extra driving kelvin pin

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Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

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Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack1
Grade	Automotive
Package Name	H2PAK-7

Description

Key features

Key features
AEC-Q101 qualified Maximum junction temperature: T_J = 175 °C High speed switching series Minimized tail current Low V_CE(sat) = 1.6 V (typ.) @ I_C = 50 A Tight parameter distribution Low thermal resistance Positive V_CE(sat) temperature coefficient Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration Excellent switching performance thanks to the extra driving kelvin pin