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HCF4094YM013TR

8-Stage Shift-AND-Store Bus Register

Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameSO-16

The HCF4094 is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in an SO-16 package. The HCF4094 is an 8-stage, serial shift register having a storage latch associated with each stage for strobing data from the serial input to parallel buffered 3-state...
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Key features
  • 3- state parallel outputs for connection to common bus
  • Separate serial outputs synchronous to both positive and negative clock edges for cascading
  • Medium speed operation 5 MHz at 10 V
  • Quiescent current specified up to 20 V
  • Standardized symmetrical output characteristics
  • 5 V, 10 V, and 15 V parametric ratings
  • Input leakage current II= 100 nA (max.) at VDD= 18 V, TA= 25 °C
  • 100% tested for quiescent current
  • ESD performance
    • HBM: 1 kV
    • MM: 200 V
    • CDM: 1 kV
In stock
Quantity $ per unit Savings
1-9$0.486%
10-99$0.3630%
100-499$0.3237%
500$0.3139%
Contact sales
$0.48
Special Price $0.48 Regular Price $0.51
Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameSO-16

The HCF4094 is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in an SO-16 package. The HCF4094 is an 8-stage, serial shift register having a storage latch associated with each stage for strobing data from the serial input to parallel buffered 3-state...
Read More

Key features
  • 3- state parallel outputs for connection to common bus
  • Separate serial outputs synchronous to both positive and negative clock edges for cascading
  • Medium speed operation 5 MHz at 10 V
  • Quiescent current specified up to 20 V
  • Standardized symmetrical output characteristics
  • 5 V, 10 V, and 15 V parametric ratings
  • Input leakage current II= 100 nA (max.) at VDD= 18 V, TA= 25 °C
  • 100% tested for quiescent current
  • ESD performance
    • HBM: 1 kV
    • MM: 200 V
    • CDM: 1 kV