L6387ED013TR

L6387ED013TR

L6387ED

Active

High voltage high and low-side driver

Quantity $ per Unit Savings
1 - 9$1.630%
10 - 24$1.4710%
25 - 99$1.3815%
100 - 249$1.1828%
250 - 499$1.1132%
500$0.9741%
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Out of stock
$1.63
Parameter NameParameter Value
Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6387E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function.


The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.


The L6387E features the UVLO protection on the VCCsupply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.


The device is available in a DIP-8 tube and SO-8 tube and tape and reel packaging options.

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability
    • 400 mA source
    • 650 mA sink
  • Switching times 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Internal bootstrap diode
  • Outputs in phase with inputs
  • Interlocking function