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L6387ED

L6387ED

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L6387ED013TR

High voltage high and low-side driver

Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6387E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can...
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Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability
    • 400 mA source
    • 650 mA sink
  • Switching times 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Internal bootstrap diode
  • Outputs in phase with inputs
  • Interlocking function
In stock
Quantity $ per unit Savings
1-9$1.470%
10-24$1.3210%
25-99$1.2515%
100-249$1.0727%
250-499$1.0032%
500$0.8741%
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$1.47
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Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6387E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can...
Read More

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability
    • 400 mA source
    • 650 mA sink
  • Switching times 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Internal bootstrap diode
  • Outputs in phase with inputs
  • Interlocking function