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    L6392DTR

    L6392DTR

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    L6392D

    High voltage high and low-side driver

    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-14
    Description

    The L6392 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible...
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    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/nsec in full temperature range
    • Driver current capability:
      • 290 mA source
      • 430 mA sink
    • Switching times 75/35 nsec rise/fall with 1 nF load
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Integrated bootstrap diode
    • Operational amplifier for advanced current sensing
    • Adjustable deadtime
    • Interlocking function
    • Compact and simplified layout
    • Bill of material reduction
    • Flexible, easy and fast design
    In stock
    Quantity $ per unit Savings
    1-9$2.280%
    10-20$2.0610%
    20 + Contact sales
    $2.28
    $2.28
    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-14
    Description

    The L6392 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible...
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/nsec in full temperature range
    • Driver current capability:
      • 290 mA source
      • 430 mA sink
    • Switching times 75/35 nsec rise/fall with 1 nF load
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Integrated bootstrap diode
    • Operational amplifier for advanced current sensing
    • Adjustable deadtime
    • Interlocking function
    • Compact and simplified layout
    • Bill of material reduction
    • Flexible, easy and fast design
    Associated products