L6392DTR

L6392DTR

L6392D Active

High voltage high and low-side driver
Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameSO-14
Key Features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 290 mA source
    • 430 mA sink
  • Switching times 75/35 nsec rise/fall with 1 nF load
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Integrated bootstrap diode
  • Operational amplifier for advanced current sensing
  • Adjustable deadtime
  • Interlocking function
  • Compact and simplified layout
  • Bill of material reduction
  • Flexible, easy and fast design

The L6392 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT.


The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.


The IC embeds an operational amplifier suitable for advanced current sensing in applications such as field oriented motor control.

In stock:
$1.62
Range Unit Price Savings
1 - 9$1.620%
10 - 99$1.3715%
100 - 499$0.9641%
500$0.9442%
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