L6395DTR

L6395DTR

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L6395D

High voltage high and low-side driver

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6395 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single-chip high and low-side gate driver for N-channel power MOSFETs or IGBTs.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible...
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Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/ns in full temperature range
  • Driver current capability:
    • 290 mA source
    • 430 mA sink
  • Switching times 75/35 ns rise/fall with 1 nF load
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Integrated bootstrap diode
  • Compact and simplified layout
  • Bill of material reduction
  • Effective fault protection
  • Flexible, easy and fast design
In stock
Quantity $ per unit Savings
1-9$1.910%
10-50$1.6315%
Contact sales
$1.91
$1.91
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6395 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single-chip high and low-side gate driver for N-channel power MOSFETs or IGBTs.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible...
Read More

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/ns in full temperature range
  • Driver current capability:
    • 290 mA source
    • 430 mA sink
  • Switching times 75/35 ns rise/fall with 1 nF load
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Integrated bootstrap diode
  • Compact and simplified layout
  • Bill of material reduction
  • Effective fault protection
  • Flexible, easy and fast design