L6399D

High voltage high and low-side driver

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-8

Description

The L6399 is a high voltage device manufactured using BCD™ “offline” technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs.The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible...
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Key features

Key features
High voltage rail up to 600 V dV/dt immunity ± 50 V/ns over full temperature range Driver current capability: 290 mA source 430 mA sink Switching times 75/35 ns rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Internal 320 ns deadtime Interlocking function Compact and simplified layout Bill of material reduction Flexible, easy and fast design

Out of Stock

Quantity	$ per unit	Savings
1-9	$2.07	0%
10-24	$1.86	10%
25-99	$1.75	15%
100-249	$1.50	28%
250-499	$1.40	32%
500	$1.23	41%
500 +	Contact sales

$2.07

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-8

Description

Key features

Key features
High voltage rail up to 600 V dV/dt immunity ± 50 V/ns over full temperature range Driver current capability: 290 mA source 430 mA sink Switching times 75/35 ns rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Internal 320 ns deadtime Interlocking function Compact and simplified layout Bill of material reduction Flexible, easy and fast design