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L6399DTR

L6399DTR

L6399D

Active

High voltage high and low-side driver

Quantity $ per Unit Savings
1 - 9$2.060%
10 - 24$1.8610%
25 - 99$1.7515%
100 - 249$1.5027%
250 - 499$1.4032%
500$1.2241%
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Out of stock
$2.06
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameSO-8

The L6399 is a high voltage device manufactured using BCD™ “offline” technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs.


The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy microcontroller/DSP interfacing.

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/ns over full temperature range
  • Driver current capability:
    • 290 mA source
    • 430 mA sink
  • Switching times 75/35 ns rise/fall with 1 nF load
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Integrated bootstrap diode
  • Internal 320 ns deadtime
  • Interlocking function
  • Compact and simplified layout
  • Bill of material reduction
  • Flexible, easy and fast design