L6399D

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High voltage high and low-side driver
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Quantity	$ per Unit	Savings
1 - 9	$2.06	0%
10 - 24	$1.86	10%
25 - 99	$1.75	15%
100 - 249	$1.50	27%
250 - 499	$1.40	32%
500	$1.22	41%
500 +	Contact Sales

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$2.06

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Parameter

Parameter Name	Parameter Value
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-8

Description

The L6399 is a high voltage device manufactured using BCD™ “offline” technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs.

The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy microcontroller/DSP interfacing.

Key features

Key features
High voltage rail up to 600 V dV/dt immunity ± 50 V/ns over full temperature range Driver current capability: 290 mA source 430 mA sink Switching times 75/35 ns rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Internal 320 ns deadtime Interlocking function Compact and simplified layout Bill of material reduction Flexible, easy and fast design

L6399DTR

L6399D

Active

High voltage high and low-side driver Learn More about L6399D

High voltage high and low-side driver
Learn More about L6399D