Toggle Nav
Search
Advanced Search
Compare ()
Cart 0
Menu
Account
Settings
  • Language
    English
    • Currency
    USD
    L6399D

    L6399D

    main product photo

    Active

    L6399DTR

    High voltage high and low-side driver

    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-8
    Description

    The L6399 is a high voltage device manufactured using BCD™ “offline” technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs.The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible...
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/ns over full temperature range
    • Driver current capability:
      • 290 mA source
      • 430 mA sink
    • Switching times 75/35 ns rise/fall with 1 nF load
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Integrated bootstrap diode
    • Internal 320 ns deadtime
    • Interlocking function
    • Compact and simplified layout
    • Bill of material reduction
    • Flexible, easy and fast design
    In stock
    Quantity $ per unit Savings
    1-9$1.850%
    10-24$1.689%
    25-99$1.6014%
    100-200$1.3825%
    200 + Contact sales
    $1.85
    $1.85
    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-8
    Description

    The L6399 is a high voltage device manufactured using BCD™ “offline” technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs.The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible...
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt immunity ± 50 V/ns over full temperature range
    • Driver current capability:
      • 290 mA source
      • 430 mA sink
    • Switching times 75/35 ns rise/fall with 1 nF load
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Integrated bootstrap diode
    • Internal 320 ns deadtime
    • Interlocking function
    • Compact and simplified layout
    • Bill of material reduction
    • Flexible, easy and fast design
    Associated products