L6491D

High voltage high and low-side 4 A gate driver

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-14

Description

The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to...
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Key features

Key features
High voltage rail up to 600 V dV/dt immunity ± 50 V/ns in full temperature range Driver current capability: 4 A source/sink Switching times 15 ns rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Comparator for fault protections Smart shutdown function Adjustable deadtime Interlocking function Compact and simplified layout Bill of material reduction Effective fault protection Flexible, easy and fast design

In stock

Quantity	$ per unit	Savings
1-9	$1.81	0%
10-99	$1.59	12%
100-105	$1.35	25%
105 +	Contact sales

$1.81

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-14

Description

Key features

Key features
High voltage rail up to 600 V dV/dt immunity ± 50 V/ns in full temperature range Driver current capability: 4 A source/sink Switching times 15 ns rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Comparator for fault protections Smart shutdown function Adjustable deadtime Interlocking function Compact and simplified layout Bill of material reduction Effective fault protection Flexible, easy and fast design