L6491D

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High voltage high and low-side 4 A gate driver
Learn More about L6491D

Quantity	$ per Unit	Savings
1 - 9	$3.02	0%
10 - 24	$2.72	10%
25 - 99	$2.57	15%
100 - 105	$2.22	26%
105 +	Contact Sales

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$3.02

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Parameter

Parameter Name	Parameter Value
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
ROHS Compliance Grade	Ecopack2
Grade	Industrial
Package Name	SO-14

Description

The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.

The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.

An integrated comparator is available for fast protection against overcurrent, overtemperature, etc.

Key features

Key features
High voltage rail up to 600 V dV/dt immunity ± 50 V/ns in full temperature range Driver current capability: 4 A source/sink Switching times 15 ns rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Comparator for fault protections Smart shutdown function Adjustable deadtime Interlocking function Compact and simplified layout Bill of material reduction Effective fault protection Flexible, easy and fast design

L6491DTR

L6491D

Active

High voltage high and low-side 4 A gate driver Learn More about L6491D

High voltage high and low-side 4 A gate driver
Learn More about L6491D