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L6491DTR

L6491DTR

L6491D

Active

High voltage high and low-side 4 A gate driver

Quantity $ per Unit Savings
1 - 9$3.020%
10 - 24$2.7010%
25 - 99$2.5615%
100 - 105$2.2227%
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In stock
$3.02
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-14

The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.


The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.


An integrated comparator is available for fast protection against overcurrent, overtemperature, etc.

Key features
  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/ns in full temperature range
  • Driver current capability: 4 A source/sink
  • Switching times 15 ns rise/fall with 1 nF load
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Integrated bootstrap diode
  • Comparator for fault protections
  • Smart shutdown function
  • Adjustable deadtime
  • Interlocking function
  • Compact and simplified layout
  • Bill of material reduction
  • Effective fault protection
  • Flexible, easy and fast design