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    L6494LD

    L6494LD

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    L6494LDTR

    High voltage high and low-side 2 A gate driver

    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-14
    Description

    The L6494 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs.The high-side (floating) section is designed to stand a voltage rail up to 500 V, with 600 Vtransient withstand voltage. The...
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    Key features
    Key features
    • Transient withstand voltage 600 V
    • dV/dt immunity ± 50 V/ns in full temperature range
    • Driver current capability:
      • 2 A source typ. at 25 °C
      • 2.5 A sink typ. at 25 °C
    • Short propagation delay: 85 ns
    • Switching times 25 ns rise/fall with 1 nF load
    • Integrated bootstrap diode
    • Single input and shutdown pin
    • Adjustable deadtime
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • UVLO on both high-side and low-side sections
    • Compact and simplified layout
    • Bill of material reduction
    • Flexible, easy and fast design
    In stock
    Quantity $ per unit Savings
    1-9$1.740%
    10-99$1.4019%
    100-249$1.2528%
    250-264$1.1931%
    264 + Contact sales
    $1.74
    $1.73
    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-14
    Description

    The L6494 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs.The high-side (floating) section is designed to stand a voltage rail up to 500 V, with 600 Vtransient withstand voltage. The...
    Read More

    Key features
    Key features
    • Transient withstand voltage 600 V
    • dV/dt immunity ± 50 V/ns in full temperature range
    • Driver current capability:
      • 2 A source typ. at 25 °C
      • 2.5 A sink typ. at 25 °C
    • Short propagation delay: 85 ns
    • Switching times 25 ns rise/fall with 1 nF load
    • Integrated bootstrap diode
    • Single input and shutdown pin
    • Adjustable deadtime
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • UVLO on both high-side and low-side sections
    • Compact and simplified layout
    • Bill of material reduction
    • Flexible, easy and fast design
    Associated products