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L6494LD

L6494LD

STUSB1602AQTR

STUSB1602AQTR

Active

L6494LDTR

High voltage high and low-side 2 A gate driver

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-14

The L6494 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs.The high-side (floating) section is designed to stand a voltage rail up to 500 V, with 600 Vtransient withstand voltage. The...
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Key features
  • Transient withstand voltage 600 V
  • dV/dt immunity ± 50 V/ns in full temperature range
  • Driver current capability:
    • 2 A source typ. at 25 °C
    • 2.5 A sink typ. at 25 °C
  • Short propagation delay: 85 ns
  • Switching times 25 ns rise/fall with 1 nF load
  • Integrated bootstrap diode
  • Single input and shutdown pin
  • Adjustable deadtime
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • UVLO on both high-side and low-side sections
  • Compact and simplified layout
  • Bill of material reduction
  • Flexible, easy and fast design
In stock
Quantity $ per unit Savings
1-9$1.960%
10-24$1.5421%
25-99$1.4029%
100-249$1.3034%
250-499$1.2437%
500$1.1343%
Contact sales
$1.96
$1.96
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-14

The L6494 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs.The high-side (floating) section is designed to stand a voltage rail up to 500 V, with 600 Vtransient withstand voltage. The...
Read More

Key features
  • Transient withstand voltage 600 V
  • dV/dt immunity ± 50 V/ns in full temperature range
  • Driver current capability:
    • 2 A source typ. at 25 °C
    • 2.5 A sink typ. at 25 °C
  • Short propagation delay: 85 ns
  • Switching times 25 ns rise/fall with 1 nF load
  • Integrated bootstrap diode
  • Single input and shutdown pin
  • Adjustable deadtime
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • UVLO on both high-side and low-side sections
  • Compact and simplified layout
  • Bill of material reduction
  • Flexible, easy and fast design