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L6498LD

L6498LD

L6498LDTR

L6498LDTR

Active

L6498D

High voltage high and low-side 2 A gate driver

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6498 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single chip half-bridge gate driver for the N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a DC voltage rail up to 500 V, with 600 V transient withstand voltage....
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Key features
  • Transient withstand voltage 600 V
  • dV/dt immunity ± 50 V/ns in full temperature range
  • Driver current capability:
    • 2 A source typ. at 25 °C
    • 2.5 A sink typ. at 25 °C
  • Short propagation delay: 85 ns
  • Switching times 25 ns rise/fall with 1 nF load
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Integrated bootstrap diode
  • Interlocking function
  • UVLO on both high-side and low-side sections
  • Compact and simplified layout
  • Bill of material reduction
  • Flexible, easy and fast design
In stock
Quantity $ per unit Savings
1-9$1.950%
10-24$1.4426%
25-99$1.3133%
100-249$1.1840%
250-499$1.1044%
500$1.0745%
Contact sales
$1.95
$1.95
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The L6498 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single chip half-bridge gate driver for the N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a DC voltage rail up to 500 V, with 600 V transient withstand voltage....
Read More

Key features
  • Transient withstand voltage 600 V
  • dV/dt immunity ± 50 V/ns in full temperature range
  • Driver current capability:
    • 2 A source typ. at 25 °C
    • 2.5 A sink typ. at 25 °C
  • Short propagation delay: 85 ns
  • Switching times 25 ns rise/fall with 1 nF load
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Integrated bootstrap diode
  • Interlocking function
  • UVLO on both high-side and low-side sections
  • Compact and simplified layout
  • Bill of material reduction
  • Flexible, easy and fast design