L6498D

High voltage high and low-side 2 A gate driver

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-8

Description

The L6498 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single chip half-bridge gate driver for the N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a DC voltage rail up to 500 V, with 600 V transient withstand voltage....
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Key features

Key features
Transient withstand voltage 600 V dV/dt immunity ± 50 V/ns in full temperature range Driver current capability: 2 A source typ. at 25 °C 2.5 A sink typ. at 25 °C Short propagation delay: 85 ns Switching times 25 ns rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Interlocking function UVLO on both high-side and low-side sections Compact and simplified layout Bill of material reduction Flexible, easy and fast design

In stock

Quantity	$ per unit	Savings
1-9	$3.23	2%
10-24	$2.43	23%
25-99	$2.22	30%
100-249	$2.00	37%
250-499	$1.88	41%
500	$1.83	42%
500 +	Contact sales

$3.23

$3.17

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-8

Description

Key features

Key features
Transient withstand voltage 600 V dV/dt immunity ± 50 V/ns in full temperature range Driver current capability: 2 A source typ. at 25 °C 2.5 A sink typ. at 25 °C Short propagation delay: 85 ns Switching times 25 ns rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Interlocking function UVLO on both high-side and low-side sections Compact and simplified layout Bill of material reduction Flexible, easy and fast design