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    L6498LD

    L6498LD

    L6498LDTR

    L6498LDTR

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    L6498DTR

    High voltage high and low-side 2 A gate driver

    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-8
    Description

    The L6498 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single chip half-bridge gate driver for the N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a DC voltage rail up to 500 V, with 600 V transient withstand voltage....
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    Key features
    Key features
    • Transient withstand voltage 600 V
    • dV/dt immunity ± 50 V/ns in full temperature range
    • Driver current capability:
      • 2 A source typ. at 25 °C
      • 2.5 A sink typ. at 25 °C
    • Short propagation delay: 85 ns
    • Switching times 25 ns rise/fall with 1 nF load
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Integrated bootstrap diode
    • Interlocking function
    • UVLO on both high-side and low-side sections
    • Compact and simplified layout
    • Bill of material reduction
    • Flexible, easy and fast design
    In stock
    Quantity $ per unit Savings
    1-9$1.760%
    10-24$1.3026%
    25-99$1.1933%
    100-249$1.0640%
    250-499$0.9944%
    500$0.9546%
    500 + Contact sales
    $1.76
    $1.76
    or
    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-8
    Description

    The L6498 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single chip half-bridge gate driver for the N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a DC voltage rail up to 500 V, with 600 V transient withstand voltage....
    Read More

    Key features
    Key features
    • Transient withstand voltage 600 V
    • dV/dt immunity ± 50 V/ns in full temperature range
    • Driver current capability:
      • 2 A source typ. at 25 °C
      • 2.5 A sink typ. at 25 °C
    • Short propagation delay: 85 ns
    • Switching times 25 ns rise/fall with 1 nF load
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Integrated bootstrap diode
    • Interlocking function
    • UVLO on both high-side and low-side sections
    • Compact and simplified layout
    • Bill of material reduction
    • Flexible, easy and fast design
    Associated products