Toggle Nav
Search
Compare ()
Cart 0
Menu
Account
Settings
  • Language
    English
    • Currency
    USD

    📢 Limited time offer – Buy One Get One Free on Intelligent Power Switch boards. Use code DV-IPS-BOGO-12 at checkout! Order now

    ⚡ Flash sale: FREE Page EEPROM products until Dec. 19th. Use code DV-EEPROM-FREE-11 at checkout! Shop Now

    🎄 Celebrate early X’mas with us: $5.99 flat rate shipping on all orders! Promotion ends on Dec. 19th. Shop Now 🎄

    L99H92QF-TR

    L99H92QF-TR

    main product photo

    Active

    L99H92Q5-TR

    H-Bridge Gate Driver for Automotive Applications

    Parameters
    Supply Voltage Min Volt4.51
    Supply Voltage Max Volt28.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameQFN-32L WF
    Description

    The L99H92 is designed to drive 4 external N-channel MOSFET transistors in single H-bridge or dual independent half bridge configuration for DC-motor control in automotive applications. Two free configurable current sense amplifiers are integrated.The device has a low power mode (standby mode)...
    Read More

    Key features
    Key features
    • AEC-Q100 qualified
    • RoHs compliant device
    • Power supply operating range from 4.51 V to 28 V (gate drivers operative from 5.41 V)
    • 3.3 V/5 V compatible I/Os
    • All pins linked to the microcontroller, fail-safe input and VDD are made tolerant to battery exposure
    • Dual half-bridge driver compatible with standard level threshold NMOSFETs
    • Configurable full-bridge or dual independent half-bridges control
      • Programmable recirculation path in case of full-bridge control
    • Dual stage charge pump supporting 100% PWM duty cycle down to 5.41 V battery voltage
      • High and low side minimum VGS=6.2 V @ VDH=5.5 V and charge pump load current (ICPLOAD) equal to 5 mA
      • High and low side minimum VGS=8.2 V @ VDH≥8 V and charge pump load current (ICPLOAD) equal to 10 mA
    • Charge pump output available for driving an external reverse battery NMOSFET protection
    • Programmable gate driving current (up to 170 mA) for output voltage slew rate control
    • Programmable drain-source monitoring for overcurrent protection and programmable cross-current protection time (dead-time)
    • Open load and output short circuit detection in off-state diagnostic mode
    • SPI for control and diagnosis (ST SPI 4.1)
    • Programmable diagnostic output
    • Two independent current sense amplifiers
      • Low offset with extremely low thermal drift
      • Suitable for high-side, in-line and low–side current sensing
      • Independently programmable gain (10x, 20x, 50x, 100x)
      • Analog output centered at VDD/2 or VDD/22
    • Overtemperature prewarning and shutdown
    • Analog and digital power supply inputs over/undervoltage protections
    • Asynchronous and logic independent fail-safe input to switch off all the MOSFETs
    • Low quiescent current
    • Support for random HW faults up to ASIL B
    In stock
    Quantity $ per unit Savings
    1-9$3.210%
    10-25$2.2231%
    25 + Contact sales
    $3.21
    $3.21
    Parameters
    Supply Voltage Min Volt4.51
    Supply Voltage Max Volt28.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameQFN-32L WF
    Description

    The L99H92 is designed to drive 4 external N-channel MOSFET transistors in single H-bridge or dual independent half bridge configuration for DC-motor control in automotive applications. Two free configurable current sense amplifiers are integrated.The device has a low power mode (standby mode)...
    Read More

    Key features
    Key features
    • AEC-Q100 qualified
    • RoHs compliant device
    • Power supply operating range from 4.51 V to 28 V (gate drivers operative from 5.41 V)
    • 3.3 V/5 V compatible I/Os
    • All pins linked to the microcontroller, fail-safe input and VDD are made tolerant to battery exposure
    • Dual half-bridge driver compatible with standard level threshold NMOSFETs
    • Configurable full-bridge or dual independent half-bridges control
      • Programmable recirculation path in case of full-bridge control
    • Dual stage charge pump supporting 100% PWM duty cycle down to 5.41 V battery voltage
      • High and low side minimum VGS=6.2 V @ VDH=5.5 V and charge pump load current (ICPLOAD) equal to 5 mA
      • High and low side minimum VGS=8.2 V @ VDH≥8 V and charge pump load current (ICPLOAD) equal to 10 mA
    • Charge pump output available for driving an external reverse battery NMOSFET protection
    • Programmable gate driving current (up to 170 mA) for output voltage slew rate control
    • Programmable drain-source monitoring for overcurrent protection and programmable cross-current protection time (dead-time)
    • Open load and output short circuit detection in off-state diagnostic mode
    • SPI for control and diagnosis (ST SPI 4.1)
    • Programmable diagnostic output
    • Two independent current sense amplifiers
      • Low offset with extremely low thermal drift
      • Suitable for high-side, in-line and low–side current sensing
      • Independently programmable gain (10x, 20x, 50x, 100x)
      • Analog output centered at VDD/2 or VDD/22
    • Overtemperature prewarning and shutdown
    • Analog and digital power supply inputs over/undervoltage protections
    • Asynchronous and logic independent fail-safe input to switch off all the MOSFETs
    • Low quiescent current
    • Support for random HW faults up to ASIL B
    Associated products