L99H92QF-TR

L99H92QF-TR

Active

L99H92Q5-TR

H-Bridge Gate Driver for Automotive Applications

Supply Voltage Min Volt4.51
Supply Voltage Max Volt28.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameQFN-32L WF

The L99H92 is designed to drive 4 external N-channel MOSFET transistors in single H-bridge or dual independent half bridge configuration for DC-motor control in automotive applications. Two free configurable current sense amplifiers are integrated.The device has a low power mode (standby mode)...
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Key features
  • AEC-Q100 qualified
  • RoHs compliant device
  • Power supply operating range from 4.51 V to 28 V (gate drivers operative from 5.41 V)
  • 3.3 V/5 V compatible I/Os
  • All pins linked to the microcontroller, fail-safe input and VDD are made tolerant to battery exposure
  • Dual half-bridge driver compatible with standard level threshold NMOSFETs
  • Configurable full-bridge or dual independent half-bridges control
    • Programmable recirculation path in case of full-bridge control
  • Dual stage charge pump supporting 100% PWM duty cycle down to 5.41 V battery voltage
    • High and low side minimum VGS=6.2 V @ VDH=5.5 V and charge pump load current (ICPLOAD) equal to 5 mA
    • High and low side minimum VGS=8.2 V @ VDH≥8 V and charge pump load current (ICPLOAD) equal to 10 mA
  • Charge pump output available for driving an external reverse battery NMOSFET protection
  • Programmable gate driving current (up to 170 mA) for output voltage slew rate control
  • Programmable drain-source monitoring for overcurrent protection and programmable cross-current protection time (dead-time)
  • Open load and output short circuit detection in off-state diagnostic mode
  • SPI for control and diagnosis (ST SPI 4.1)
  • Programmable diagnostic output
  • Two independent current sense amplifiers
    • Low offset with extremely low thermal drift
    • Suitable for high-side, in-line and low–side current sensing
    • Independently programmable gain (10x, 20x, 50x, 100x)
    • Analog output centered at VDD/2 or VDD/22
  • Overtemperature prewarning and shutdown
  • Analog and digital power supply inputs over/undervoltage protections
  • Asynchronous and logic independent fail-safe input to switch off all the MOSFETs
  • Low quiescent current
  • Support for random HW faults up to ASIL B
In stock
Quantity $ per unit Savings
1-9$3.350%
10-25$2.8515%
Contact sales
$3.35
$3.35
Supply Voltage Min Volt4.51
Supply Voltage Max Volt28.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameQFN-32L WF

The L99H92 is designed to drive 4 external N-channel MOSFET transistors in single H-bridge or dual independent half bridge configuration for DC-motor control in automotive applications. Two free configurable current sense amplifiers are integrated.The device has a low power mode (standby mode)...
Read More

Key features
  • AEC-Q100 qualified
  • RoHs compliant device
  • Power supply operating range from 4.51 V to 28 V (gate drivers operative from 5.41 V)
  • 3.3 V/5 V compatible I/Os
  • All pins linked to the microcontroller, fail-safe input and VDD are made tolerant to battery exposure
  • Dual half-bridge driver compatible with standard level threshold NMOSFETs
  • Configurable full-bridge or dual independent half-bridges control
    • Programmable recirculation path in case of full-bridge control
  • Dual stage charge pump supporting 100% PWM duty cycle down to 5.41 V battery voltage
    • High and low side minimum VGS=6.2 V @ VDH=5.5 V and charge pump load current (ICPLOAD) equal to 5 mA
    • High and low side minimum VGS=8.2 V @ VDH≥8 V and charge pump load current (ICPLOAD) equal to 10 mA
  • Charge pump output available for driving an external reverse battery NMOSFET protection
  • Programmable gate driving current (up to 170 mA) for output voltage slew rate control
  • Programmable drain-source monitoring for overcurrent protection and programmable cross-current protection time (dead-time)
  • Open load and output short circuit detection in off-state diagnostic mode
  • SPI for control and diagnosis (ST SPI 4.1)
  • Programmable diagnostic output
  • Two independent current sense amplifiers
    • Low offset with extremely low thermal drift
    • Suitable for high-side, in-line and low–side current sensing
    • Independently programmable gain (10x, 20x, 50x, 100x)
    • Analog output centered at VDD/2 or VDD/22
  • Overtemperature prewarning and shutdown
  • Analog and digital power supply inputs over/undervoltage protections
  • Asynchronous and logic independent fail-safe input to switch off all the MOSFETs
  • Low quiescent current
  • Support for random HW faults up to ASIL B