M24256E-FMN6TP

256-Kbit serial I2C bus EEPROM with configurable device address

Parameters

Supply Voltage Min Volt	1.6
Supply Voltage Max Volt	5.5
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	85.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO8

Description

The M24256E-F is a 256-Kbit I²C-compatible EEPROM (electrically erasable programmable memory) organized as 32 K x 8 bits. It can operate with a supply voltage from 1.65 V to 5.5 V with a clock frequency up to 1 MHz, over an ambient temperature ranging from -40 °C to +85 °C. It can also...
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Key features

Key features
I²C interface Compatible with the following I²C bus modes: 1 MHz (Fast-mode Plus) 400 kHz (Fast-mode) 100 kHz (Standard-mode) Memory 256-Kbit (32-Kbyte) of EEPROM Page size: 64-byte Additional 64-byte identification page Supply voltage Wide voltage range: 1.6 V to 5.5 V Temperature Operating temperature range: -40 °C to +85 °C Fast write cycle time Byte and page write within 5 ms (typically 3.2 ms) Performance Enhanced ESD/latch-up protection More than 4 million write cycles More than 200-year data retention Fast wake-up time (less than 5 μs) Ultralow power current consumption 310 nA (typical) in standby mode 100 μA (typical) for read current 150 μA (typical) for write current Advanced features Configurable device address register Preprogrammed device address Hardware write protection of the whole memory array Random and sequential read modes Package SO8N, TSSOP8, UFDFPN8, and UFDFPN5 (ECOPACK2) Unsawn wafer (each die is tested)

In stock

Quantity	$ per unit	Savings
1-9	$0.24	2%
10-50	$0.19	22%
50 +	Contact sales

$0.24

Parameters

Supply Voltage Min Volt	1.6
Supply Voltage Max Volt	5.5
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	85.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO8

Description

Key features

Key features
I²C interface Compatible with the following I²C bus modes: 1 MHz (Fast-mode Plus) 400 kHz (Fast-mode) 100 kHz (Standard-mode) Memory 256-Kbit (32-Kbyte) of EEPROM Page size: 64-byte Additional 64-byte identification page Supply voltage Wide voltage range: 1.6 V to 5.5 V Temperature Operating temperature range: -40 °C to +85 °C Fast write cycle time Byte and page write within 5 ms (typically 3.2 ms) Performance Enhanced ESD/latch-up protection More than 4 million write cycles More than 200-year data retention Fast wake-up time (less than 5 μs) Ultralow power current consumption 310 nA (typical) in standby mode 100 μA (typical) for read current 150 μA (typical) for write current Advanced features Configurable device address register Preprogrammed device address Hardware write protection of the whole memory array Random and sequential read modes Package SO8N, TSSOP8, UFDFPN8, and UFDFPN5 (ECOPACK2) Unsawn wafer (each die is tested)