📢 Promotion ends on Mar. 31st! Get FREE SHIPPING for your automotive project! Order now! 🛒

M24512E-FDW6TP

M24512E-FDW6TP

M24512E-FMN6TP

Active

512Kbit Serial I2C bus EEPROM with configurable device address and software write protection registers

Quantity $ per Unit Savings
1 - 9$0.480%
10 - 99$0.473%
100 - 499$0.3820%
500$0.3821%
Contact Sales
Coming soon
$0.48
Parameter NameParameter Value
Supply Voltage Min Volt1.7
Supply Voltage Max Volt5.5
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO8

The M24512E-F is a 512-Kbit I2C-compatible EEPROM (electrically erasable programmable memory) organized as 64 K × 8 bits.


The M24512E-F can operate with a supply voltage from 1.6 V to 5.5 V with a clock frequency of 1 MHz (or less), over an ambient temperature range of -40 °C / +85 °C.


The M24512E-F offers three 8-bit registers. The device type identifier (DTI) register permanently locked in read-only mode. The configurable device address (CDA) register authorizing the user, through software, to configure up to eight possibilities of chip enable address. The software write protection (SWP) register authorizing the user, through software, to write protect partial or full memory array.


Moreover, the M24512E-F offers an additional page, named the identification page (128 byte). The identification page can be used to store sensitive application parameters which can be (later) permanently locked in read-only mode.


The M24512E-F is available in the standard 8-pin TSSOP,SO8N and UFDFPN8 with the WC pin.

Key features
  • Compatible with following I2C bus modes:
    • 1 MHz (Fast-mode Plus)
    • 400 kHz (Fast-mode)
    • 100 kHz (Standard-mode)
  • Memory array:
    • 512 Kbit (64 Kbyte) of EEPROM
    • Page size: 128 byte
    • Additional identification page
  • Device type identifier register (in read-only)
  • Configurable device address register
  • Software write protection register
  • Hardware write protection of the whole memory array
  • Single supply voltage:
    • From 1.6 V to 5.5 V
  • Write cycle time:
    • Byte write within 4 ms
    • Page write within 4 ms
  • Operating temperature range:
    • -40 °C up to +85 °C
  • Random and sequential read modes
  • Enhanced ESD/Latch-Up protection
  • More than 4 million write cycles
  • More than 200-year data retention
  • Package:
    • SO8N ECOPACK2
    • TSSOP8 ECOPACK2
    • UFDFPN8 ECOPACK2