M24C08-GCT6TP/T

8 Kbit serial I2C bus EEPROM

Parameters

Supply Voltage Min Volt	1.2
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	85.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	WLCSP

Description

The M24C08-G is an 8-Kbit I²C-compatible EEPROM (electrically erasable programmable read-only memory) organized as 1 K × 8 bits.It can operate with a supply voltage of 1.8 V ± 5% over an ambient temperature range of -40 °C/+85 °C, with a maximum clock frequency of 400 kHz.The product...
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Key features

Key features
I²C interface Compatible with the following I²C bus modes: 400 kHz (fast mode) 100 kHz (standard mode) Memory 8 Kbit (1-Kbyte) of EEPROM Page size: 16-byte Supply voltage Voltage range: 1.8 V ± 5% Input-output I/Os 1.2 V compatible Temperature Operating temperature range: -40 °C up to +85 °C Fast write cycle time Byte and page write within 5 ms (3.5 ms typical) Performance Enhanced ESD/latch-up protection 3 kV (HBM) More than 4 million write cycles More than 200-year data retention Ultra-low power current consumption 240 nA (typical) in Standby mode 130 μA (typical) for read current 100 μA (typical) for write current Advanced features Hardware write protection of the whole memory array Random and sequential read modes Package WLCSP4 4-ball

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.20	0%
500 +	Contact sales

$0.20

Parameters

Supply Voltage Min Volt	1.2
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	85.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	WLCSP

Description

Key features

Key features
I²C interface Compatible with the following I²C bus modes: 400 kHz (fast mode) 100 kHz (standard mode) Memory 8 Kbit (1-Kbyte) of EEPROM Page size: 16-byte Supply voltage Voltage range: 1.8 V ± 5% Input-output I/Os 1.2 V compatible Temperature Operating temperature range: -40 °C up to +85 °C Fast write cycle time Byte and page write within 5 ms (3.5 ms typical) Performance Enhanced ESD/latch-up protection 3 kV (HBM) More than 4 million write cycles More than 200-year data retention Ultra-low power current consumption 240 nA (typical) in Standby mode 130 μA (typical) for read current 100 μA (typical) for write current Advanced features Hardware write protection of the whole memory array Random and sequential read modes Package WLCSP4 4-ball