M24C08-GCT8TP/T

8-Kbit serial I2C bus EEPROM 105°C operation

Parameters

Supply Voltage Min Volt	1.2
Supply Voltage Max Volt	5.5
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	105.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	WLCSP

Description

The M24C08-G8 is an 8-Kbit I²C-compatible EEPROM (electrically erasable programmable read-only memory) organized as 1 K × 8 bits. It can operate with a supply voltage of 1.8 V ± 5%, with a maximum clock frequency of 400 kHz, over an extended temperature range from -40 °C to +105 °C,This...
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Key features

Key features
I²C interface Compatible with the following I²C bus modes: 400 kHz (Fast-mode) 100 kHz (Standard-mode) Memory 8-Kbit (1-Kbyte) of EEPROM Page size: 16-byte Supply voltage Voltage range: 1.8 V ± 5% Input/output 1.2 V-compatible Temperature Extended operating temperature range: -40 °C to + 105 °C Fast write cycle time Byte and page write within 5 ms (3.5 ms typical) Performance Enhanced ESD/latch-up protection: 3 kV (HBM) More than 4 million write cycles More than 200-year data retention Ultralow-power current consumption 240 nA (typical) in standby mode 130 μA (typical) for read current 100 μA (typical) for write current Advanced features Hardware write protection of the whole memory array Random and sequential read modes Package WLCSP4 4-ball (ECOPACK2-compliant)

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Parameters

Supply Voltage Min Volt	1.2
Supply Voltage Max Volt	5.5
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	105.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	WLCSP

Description

Key features

Key features
I²C interface Compatible with the following I²C bus modes: 400 kHz (Fast-mode) 100 kHz (Standard-mode) Memory 8-Kbit (1-Kbyte) of EEPROM Page size: 16-byte Supply voltage Voltage range: 1.8 V ± 5% Input/output 1.2 V-compatible Temperature Extended operating temperature range: -40 °C to + 105 °C Fast write cycle time Byte and page write within 5 ms (3.5 ms typical) Performance Enhanced ESD/latch-up protection: 3 kV (HBM) More than 4 million write cycles More than 200-year data retention Ultralow-power current consumption 240 nA (typical) in standby mode 130 μA (typical) for read current 100 μA (typical) for write current Advanced features Hardware write protection of the whole memory array Random and sequential read modes Package WLCSP4 4-ball (ECOPACK2-compliant)