M24C16-FTW20I/90

16 Kbit serial I2C bus EEPROM

Parameters

Supply Voltage Min Volt	1.6
Supply Voltage Max Volt	5.5
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	85.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Loose Piece
RoHs compliant	N/A
Grade	Industrial
Package Name	WAFER

Description

The M24C16 is a 16-Kbit I2C-compatible EEPROM (electrically erasable programmable memory) organized as 2K x 8 bits.The M24C16-W can be accessed (Read and Write) with a supply voltage from 2.5 V to 5.5 V, the M24C16-R can be accessed (Read and Write) with a supply voltage from...
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Key features

Key features
Packages Compatible with following I²C bus modes: 400 kHz 100 kHz Memory array: 16 Kbit (2 Kbyte) of EEPROM Page size: 16 byte Single supply voltage: M24C16-W: 2.5 V to 5.5 V M24C16-R: 1.8 V to 5.5 V M24C16-F: 1.7 V to 5.5 V (full temperature range) and 1.6 V to 1.7 V (limited temperature range) Write time: Byte write within 5 ms Page write within 5 ms Operating temperature range: from -40 °C up to +85 °C Random and sequential read modes Write protect of the whole memory array Enhanced ESD/latch-up protection More than 4 million Write cycles More than 200-year data retention SO8 ECOPACK2 TSSOP8 ECOPACK2 UFDFPN8 ECOPACK2 UFDFPN5 ECOPACK2 Unsawn wafer (each die is tested)

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

$0.00

Parameters

Supply Voltage Min Volt	1.6
Supply Voltage Max Volt	5.5
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	85.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Loose Piece
RoHs compliant	N/A
Grade	Industrial
Package Name	WAFER

Description

Key features

Key features
Packages Compatible with following I²C bus modes: 400 kHz 100 kHz Memory array: 16 Kbit (2 Kbyte) of EEPROM Page size: 16 byte Single supply voltage: M24C16-W: 2.5 V to 5.5 V M24C16-R: 1.8 V to 5.5 V M24C16-F: 1.7 V to 5.5 V (full temperature range) and 1.6 V to 1.7 V (limited temperature range) Write time: Byte write within 5 ms Page write within 5 ms Operating temperature range: from -40 °C up to +85 °C Random and sequential read modes Write protect of the whole memory array Enhanced ESD/latch-up protection More than 4 million Write cycles More than 200-year data retention SO8 ECOPACK2 TSSOP8 ECOPACK2 UFDFPN8 ECOPACK2 UFDFPN5 ECOPACK2 Unsawn wafer (each die is tested)