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M93C86-RMN6TP

M93C86-RMN6TP

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M93C86-RDW6TP

16 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM

Supply Voltage Min Volt1.8
Supply Voltage Max Volt5.5
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameTSSOP-8L

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words...
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Key features
    • Industry standard MICROWIRE™ bus
    • Single supply voltage:
      • 2.5 V to 5.5 V for M93Cx6-W
      • 1.8 V to 5.5 V for M93Cx6-R

    • Dual organization: by word (x16) or byte (x8)
    • Programming instructions that work on: byte, word or entire memory
    • Self-timed programming cycle with auto-erase: 5 ms
    • READY/BUSY signal during programming
    • 2 MHz clock rate
    • Sequential read operation
    • Enhanced ESD/latch-up behavior
    • More than 4 million write cycles
    • More than 200-year data retention
  • Package
    • ECOPACK2 (RoHS compliant) and halogen-free packages:
      • DFN8
      • SO8N
      • TSSOP8
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Supply Voltage Min Volt1.8
Supply Voltage Max Volt5.5
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameTSSOP-8L

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words...
Read More

Key features
    • Industry standard MICROWIRE™ bus
    • Single supply voltage:
      • 2.5 V to 5.5 V for M93Cx6-W
      • 1.8 V to 5.5 V for M93Cx6-R

    • Dual organization: by word (x16) or byte (x8)
    • Programming instructions that work on: byte, word or entire memory
    • Self-timed programming cycle with auto-erase: 5 ms
    • READY/BUSY signal during programming
    • 2 MHz clock rate
    • Sequential read operation
    • Enhanced ESD/latch-up behavior
    • More than 4 million write cycles
    • More than 200-year data retention
  • Package
    • ECOPACK2 (RoHS compliant) and halogen-free packages:
      • DFN8
      • SO8N
      • TSSOP8