M93C86-RMN6TP

M93C86-RMN6TP

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M93C86-RMC6TG

16 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM

Supply Voltage Min Volt1.8
Supply Voltage Max Volt5.5
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameUFDFPN8

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words...
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Key features
    • Industry standard MICROWIRE™ bus
    • Single supply voltage:
      • 2.5 V to 5.5 V for M93Cx6-W
      • 1.8 V to 5.5 V for M93Cx6-R

    • Dual organization: by word (x16) or byte (x8)
    • Programming instructions that work on: byte, word or entire memory
    • Self-timed programming cycle with auto-erase: 5 ms
    • READY/BUSY signal during programming
    • 2 MHz clock rate
    • Sequential read operation
    • Enhanced ESD/latch-up behavior
    • More than 4 million write cycles
    • More than 200-year data retention
  • Package
    • ECOPACK2 (RoHS compliant) and halogen-free packages:
      • DFN8
      • SO8N
      • TSSOP8
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Supply Voltage Min Volt1.8
Supply Voltage Max Volt5.5
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameUFDFPN8

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words...
Read More

Key features
    • Industry standard MICROWIRE™ bus
    • Single supply voltage:
      • 2.5 V to 5.5 V for M93Cx6-W
      • 1.8 V to 5.5 V for M93Cx6-R

    • Dual organization: by word (x16) or byte (x8)
    • Programming instructions that work on: byte, word or entire memory
    • Self-timed programming cycle with auto-erase: 5 ms
    • READY/BUSY signal during programming
    • 2 MHz clock rate
    • Sequential read operation
    • Enhanced ESD/latch-up behavior
    • More than 4 million write cycles
    • More than 200-year data retention
  • Package
    • ECOPACK2 (RoHS compliant) and halogen-free packages:
      • DFN8
      • SO8N
      • TSSOP8