M95M01-DRDW3TP/V

Automotive 1 Mbit SPI bus EEPROM with high speed clock

Parameters

Supply Voltage Min Volt	2.5
Supply Voltage Max Volt	5.5
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	TSSOP-8L

Description

The M95M01-A125, M95M01-A145 and M95M01-A150 are 1‑Mbit serial electrically erasable programmable memory (EEPROM) automotive-grade devices. Those manufactured in CMOSF8H operate up to +145°C, while those manufactured in CMOSF9V operate up to +150°C. They are qualified with the high reliability...
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Key features

Key features
Functional safety Follows ASIL-B ready requirement Grade AEC-Q100 grade 0 conform qualification SPI interface Compatible with the serial peripheral interface (SPI) bus Memory 1-Mbit (128-Kbyte) EEPROM Page size: 256 bytes Additional 256-byte lockable identification page Supply voltage 2.5 V to 5.5 V for CMOSF8H products 1.7 V to 5.5 V for CMOSF9V products Temperature Operating temperature range: -40 °C up to +125 °C for range 3 -40 °C up to +145 °C for range 4 for CMOSF8H -40 °C up to +150 °C for range 4 for CMOSF9V Clock frequency Up to 16 MHz Fast write cycle time Byte and page write within 5 ms (typically 4 ms) for CMOSF8H products Byte and page write within 3.5 ms (typically 2.6 ms) for CMOSF9V products Advanced features Schmitt trigger inputs for noise filtering Software write protection by quarter block Hardware write protection of the whole memory array Enhanced ESD/latch-up protection ESD human body model 4000 V Write cycle performance For CMOSF8H products More than 4 million write cycles at +25 °C More than 1.2 million write cycles at +85 °C More than 600 k write cycles at +125 °C More than 400 k write cycles at +145 °C For CMOSF9V products More than 4 million write cycles at +25 °C More than 1.2 million write cycles at +85 °C More than 600 k write cycles at +125 °C More than 400 k Write cycles at +150 °C Data retention performance 100 years at 25 °C for CMOSF8H products 15 years at 45 °C for CMOSF9V products Ultra-low power current consumption (for CMOSF9V commercial products) 0.6 μA (typical) in standby mode 650 μA (typical) for read current 1 mA (typical) for write current Packages SO8N, TSSOP8, and WFDFPN8 (ECOPACK2-compliant)

In stock

Quantity	$ per unit	Savings
1-9	$1.53	2%
10-24	$1.44	4%
25-49	$1.40	7%
50-99	$1.37	9%
100-249	$1.34	11%
250	$1.30	13%
250 +	Contact sales

$1.53

$1.50

Parameters

Supply Voltage Min Volt	2.5
Supply Voltage Max Volt	5.5
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	TSSOP-8L

Description

Key features

Key features
Functional safety Follows ASIL-B ready requirement Grade AEC-Q100 grade 0 conform qualification SPI interface Compatible with the serial peripheral interface (SPI) bus Memory 1-Mbit (128-Kbyte) EEPROM Page size: 256 bytes Additional 256-byte lockable identification page Supply voltage 2.5 V to 5.5 V for CMOSF8H products 1.7 V to 5.5 V for CMOSF9V products Temperature Operating temperature range: -40 °C up to +125 °C for range 3 -40 °C up to +145 °C for range 4 for CMOSF8H -40 °C up to +150 °C for range 4 for CMOSF9V Clock frequency Up to 16 MHz Fast write cycle time Byte and page write within 5 ms (typically 4 ms) for CMOSF8H products Byte and page write within 3.5 ms (typically 2.6 ms) for CMOSF9V products Advanced features Schmitt trigger inputs for noise filtering Software write protection by quarter block Hardware write protection of the whole memory array Enhanced ESD/latch-up protection ESD human body model 4000 V Write cycle performance For CMOSF8H products More than 4 million write cycles at +25 °C More than 1.2 million write cycles at +85 °C More than 600 k write cycles at +125 °C More than 400 k write cycles at +145 °C For CMOSF9V products More than 4 million write cycles at +25 °C More than 1.2 million write cycles at +85 °C More than 600 k write cycles at +125 °C More than 400 k Write cycles at +150 °C Data retention performance 100 years at 25 °C for CMOSF8H products 15 years at 45 °C for CMOSF9V products Ultra-low power current consumption (for CMOSF9V commercial products) 0.6 μA (typical) in standby mode 650 μA (typical) for read current 1 mA (typical) for write current Packages SO8N, TSSOP8, and WFDFPN8 (ECOPACK2-compliant)